Lattice constant in diluted magnetic semiconductors (Ga,Mn)As

J. Masek,J. Kudrnovsky,F. Maca

DOI: https://doi.org/10.1103/PhysRevB.67.153203

2003-02-07

Abstract:We use the density-functional calculations to investigate the compositional dependence of the lattice constant of (Ga,Mn)As containing various native defects. The lattice constant of perfect mixed crystals does not depend much on the concentration of Mn. The lattice parameter increases if some Mn atoms occupy interstitial positions. The same happens if As antisite defects are present. A quantitative agreement with the observed compositional dependence is obtained for materials close to a complete compensation due to these two donors. The increase of the lattice constant of (Ga,Mn)As is correlated with the degree of compensation: the materials with low compensation should have lattice constants close to the lattice constant of GaAs crystal.

Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to understand the phenomenon that the lattice constant in the diluted magnetic semiconductor (Ga,Mn)As increases as the Mn concentration increases. According to the simple expectation based on atomic radii, Mn atoms are smaller than Ga atoms, so the lattice constant should decrease rather than increase. However, what is experimentally observed is that the lattice constant increases as the Mn concentration increases. To explain this anomalous phenomenon, the authors used density - functional theory calculations to study the influence of different defects (such as Mn occupying interstitial positions and As anti - site defects) on the lattice constant.

Specifically, the main problems of this paper include:

1. **Explaining the reason for the increase in lattice constant**: Why does the lattice constant of (Ga,Mn)As increase instead of decreasing as expected when Mn is doped?
2. **Evaluating the influence of different defects**: Studying the different influences of Mn atoms in substitutional and interstitial positions, and the specific contribution of As anti - site defects to the lattice constant.
3. **Quantitatively describing the change in lattice constant**: Establishing a quantitative relationship between the lattice constant and different defect concentrations through theoretical calculations and comparing it with experimental results.

### Main findings

- **Influence of substitutional Mn**: The influence of substitutional Mn atoms on the lattice constant is very small and almost negligible.
- **Influence of interstitial Mn**: When Mn atoms occupy interstitial positions, the lattice constant increases significantly. This may be due to the role of interstitial Mn as a double - donor.
- **Influence of As anti - site defects**: As anti - site defects also lead to an increase in the lattice constant, and their influence is stronger than that of substitutional Mn.

Finally, the authors conclude that the increase in the lattice constant is mainly attributed to the existence of interstitial Mn atoms and As anti - site defects. These defects make the material highly compensated, reducing the doping efficiency of Mn and the Curie temperature.

### Summary of mathematical expressions

- Influence of substitutional Mn on the lattice constant:
\[
a(x) = a_0+ 0.02x\quad (\text{˚A})
\]
- Influence of interstitial Mn on the lattice constant:
\[
a(z) = a_0+ 0.86z\quad (\text{˚A})
\]
- Influence of As anti - site defects on the lattice constant:
\[
a(y) = a_0+ 0.69y\quad (\text{˚A})
\]
- Formula for the lattice constant considering all defects:
\[
a(x, y, z) = a_0+ 0.02x + 0.69y+ 1.05z\quad (\text{˚A})
\]

These formulas indicate that the change in the lattice constant is the result of the combined action of multiple factors, among which interstitial Mn and As anti - site defects play a key role.