Abstract:We consider the electronic properties of ferromagnetic bulk GaMnAs at zero temperature using two realistic tight-binding models, one due to Tang and Flatte and one due to Masek. In particular, we study the density of states, the Fermi energy, the inverse participation ratio, and the optical conductivity with varying impurity concentration x=0.01-0.15. The results are very sensitive to the assumptions made for the on-site and hopping matrix elements of the Mn impurities. For low concentrations, x<0.02, Masek's model shows only small deviations from the case of p-doped GaAs with increased number of holes while within Tang and Flatte's model an impurity-band forms. For higher concentrations x, Masek's model shows minor quantitative changes in the properties we studied while the results of the Tang and Flatte model exhibit qualitative changes including strong localization of eigenstates with energies close to the band edge. These differences between the two approaches are in particular visible in the optical conductivity, where Masek's model shows a Drude peak at zero frequency while no such peak is observed in Tang and Flatte's model. Interestingly, although the two models differ qualitatively the calculated effective optical masses of both models are similar within the range of 0.4-1.0 of the free electron mass.

Lattice constant in diluted magnetic semiconductors (Ga,Mn)As

Intrinsic and Extrinsic Contributions to the Lattice Parameter of GaMnAs

The Effect of Mn Interstitials on the Lattice Parameter of Ga(1-x)Mn(x)As

Electronic and optical properties of ferromagnetic GaMnAs in a multi-band tight-binding approach

Mn incorporation in as-grown and annealed (Ga,Mn)As layers studied by x-ray diffraction and standing-wave uorescence

Determination of the local concentrations of Mn interstitials and antisite defects in GaMnAs

(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs

Mn Clusterisation in Ga1-Xmnxn

All electrical measurement of the density of states in (Ga,Mn)As

About anomalous g-factor value of Mn related defects in GaAs:Mn

Electronic- and band-structure evolution in low-doped (Ga,Mn)As

K-edge XANES of substitutional and interstitial Mn atoms in (Ga,Mn)As

Disorder and Frustration in Diluted Magnetic Semiconductors at Low Carrier Densities

Formation process and superparamagnetic properties of (Mn,Ga)As nanocrystals in GaAs fabricated by annealing of (Ga,Mn)As layers with low Mn content

Towards a Fully Ab-Initio Description of the Diluted Magnetic Semiconductor $Ga_{1-x}Mn_{x}As$. Ferromagnetism, Electronic Structure, and Optical Response

DC-transport Properties of Ferromagnetic (ga,mn)as Semiconductors

Concentration-independent Local Ferromagnetic Mn Configuration Inga1−xmnxas

Anomalous Magnetic Behavior Of Mn-Mn Dimers In The Dilute Magnetic Semiconductor (Ga,Mn)N

Systematic study of Mn-doping trends in optical properties of (Ga,Mn)As

Adsorption, Segregation and Magnetization of a Single Mn Adatom on the GaAs (110) Surface

P-Type Codoping Effect in (ga,mn)as: Mn Lattice Location Versus Magnetic Properties