Abstract:We consider the electronic properties of ferromagnetic bulk GaMnAs at zero temperature using two realistic tight-binding models, one due to Tang and Flatte and one due to Masek. In particular, we study the density of states, the Fermi energy, the inverse participation ratio, and the optical conductivity with varying impurity concentration x=0.01-0.15. The results are very sensitive to the assumptions made for the on-site and hopping matrix elements of the Mn impurities. For low concentrations, x<0.02, Masek's model shows only small deviations from the case of p-doped GaAs with increased number of holes while within Tang and Flatte's model an impurity-band forms. For higher concentrations x, Masek's model shows minor quantitative changes in the properties we studied while the results of the Tang and Flatte model exhibit qualitative changes including strong localization of eigenstates with energies close to the band edge. These differences between the two approaches are in particular visible in the optical conductivity, where Masek's model shows a Drude peak at zero frequency while no such peak is observed in Tang and Flatte's model. Interestingly, although the two models differ qualitatively the calculated effective optical masses of both models are similar within the range of 0.4-1.0 of the free electron mass.

All electrical measurement of the density of states in (Ga,Mn)As

Electronic and optical properties of ferromagnetic GaMnAs in a multi-band tight-binding approach

Magnetotransport properties of (Ga,Mn)As investigated at low temperature and high magnetic field

Boundary of Quantum Evolution under Decoherence

DC-transport Properties of Ferromagnetic (ga,mn)as Semiconductors

Electronic- and band-structure evolution in low-doped (Ga,Mn)As

Lattice constant in diluted magnetic semiconductors (Ga,Mn)As

Intrinsic and Extrinsic Contributions to the Lattice Parameter of GaMnAs

Calculation of impurity density and electron-spin relaxation times in p-type GaAs:Mn

All-Electrical Measurements of Direct Spin Hall Effect in Gaas with Esaki Diode Electrodes

Disorder and Frustration in Diluted Magnetic Semiconductors at Low Carrier Densities

Effect of annealing on the depth profile of hole concentration in (Ga,Mn)As

Electronic structure of (Ga,Mn)As as seen by synchrotron radiation

Importance of effective dimensionality in manganese pnictides

Comparison of micromagnetic parameters of ferromagnetic semiconductors (Ga,Mn)(As,P) and (Ga,Mn)As

(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs

Anomalous Hall effect in field-effect structures of (Ga,Mn)As

Electrical Properties of Er-doped In0.53Ga0.47As

Electrical Transport in a Semimetal–Semiconductor Nanocomposite

Towards a Fully Ab-Initio Description of the Diluted Magnetic Semiconductor $Ga_{1-x}Mn_{x}As$. Ferromagnetism, Electronic Structure, and Optical Response

Ferromagnetism and metallic state in digital (Ga,Mn)As heterostructures