Abstract:Electron spin relaxation in paramagnetic Ga(Mn)As quantum wells is studied via the fully microscopic kinetic spin Bloch equation approach where all the scatterings, such as the electron-impurity, electron-phonon, electron-electron Coulomb, electron-hole Coulomb, electron-hole exchange (the Bir-Aronov-Pikus mechanism) and the s-d exchange scatterings, are explicitly included. The Elliott-Yafet mechanism is also incorporated. From this approach, we study the spin relaxation in both n-type and p-type Ga(Mn)As quantum wells. For n-type Ga(Mn)As quantum wells, where most Mn ions take the interstitial positions, we find that the spin relaxation is always dominated by the D'yakonov-Perel' (DP) mechanism in the metallic region. Interestingly, the Mn concentration dependence of the spin relaxation time is nonmonotonic and exhibits a peak. This is due to the fact that the momentum scattering and the inhomogeneous broadening have different density dependences in the nondegenerate and degenerate regimes. For p-type Ga(Mn)As quantum wells, we find that the Mn concentration dependence of the spin relaxation time is also nonmonotonic and shows a peak. The cause of this behavior is that the s-d exchange scattering (or the Bir-Aronov-Pikus) mechanism dominates the spin relaxation in the high Mn concentration regime at low (or high) temperature, whereas the DP mechanism determines the spin relaxation in the low Mn concentration regime. The Elliott-Yafet mechanism also contributes to the spin relaxation at intermediate temperatures. The spin relaxation time due to the DP mechanism increases with increasing Mn concentration due to motional narrowing, whereas those due to the spin-flip mechanisms decrease with it, which thus leads to the formation of the peak. The temperature, photoexcitation density, and magnetic field dependences of the spin relaxation time in p-type Ga(Mn)As quantum wells are investigated systematically with the underlying physics revealed. Our results are consistent with the recent experimental findings.

Calculation of impurity density and electron-spin relaxation times in p-type GaAs:Mn

Electron Spin Relaxation in Paramagnetic Ga(Mn)As Quantum Wells

Magnetic properties of Mn impurities on GaAs (110) surfaces

Mn Distribution and Spin Polarization Inga1−xmnxas

Atom-by-Atom Substitution of Mn in GaAs and Visualization of their Hole-Mediated Interactions

Energetics, electronic structure and local magnetism of single 3d impurity in GaAs

Electronic and optical properties of ferromagnetic GaMnAs in a multi-band tight-binding approach

First Principle Calculation of Magnetic Properties of Doped Mn:ZnGa2S4

Comparison of micromagnetic parameters of ferromagnetic semiconductors (Ga,Mn)(As,P) and (Ga,Mn)As

Electron Spin Relaxation in P-Type GaAs Quantum Wells

Ab Initio Study on the Electronic Structure and Magnetism of MnAs, MnSb, and MnBi

Magnetotransport properties of (Ga,Mn)As investigated at low temperature and high magnetic field

Variation of magnetism by defects and impurities in two-dimensional magnetic materials based on spin spiral method: A case of -(Ga, Mn)As

Adsorption, Segregation and Magnetization of a Single Mn Adatom on the GaAs (110) Surface

Spin Relaxation in N-Type Gaas Quantum Wells from A Fully Microscopic Approach

Electronic- and band-structure evolution in low-doped (Ga,Mn)As

Manganese-diffusion-induced n-doping in semiconductor structures containing Ga(Mn)As layers

About anomalous g-factor value of Mn related defects in GaAs:Mn

Magnetic and spin‐gapless related transport properties in sputtered Mn2CoGa thin films

Calculation of the electronic structure and exchange interaction in the InSb and GaAs semiconductors codoped with Mn and Ni

Spin-dependent phenomena and device concepts explored in (Ga,Mn)As