Abstract:The discovery of ferromagnetism in Mn doped GaAs [1] has ignited interest in the development of semiconductor technologies based on electron spin and has led to several proof-of-concept spintronic devices [2-4]. A major hurdle for realistic applications of (Ga,Mn)As, or other dilute magnetic semiconductors, remains their below room-temperature ferromagnetic transition temperature. Enhancing ferromagnetism in semiconductors requires understanding the mechanisms for interaction between magnetic dopants, such as Mn, and identifying the circumstances in which ferromagnetic interactions are maximized [5]. Here we report the use of a novel atom-by-atom substitution technique with the scanning tunnelling microscope (STM) to perform the first controlled atomic scale study of the interactions between isolated Mn acceptors mediated by the electronic states of GaAs. High-resolution STM measurements are used to visualize the GaAs electronic states that participate in the Mn-Mn interaction and to quantify the interaction strengths as a function of relative position and orientation. Our experimental findings, which can be explained using tight-binding model calculations, reveal a strong dependence of ferromagnetic interaction on crystallographic orientation. This anisotropic interaction can potentially be exploited by growing oriented Ga1-xMnxAs structures to enhance the ferromagnetic transition temperature beyond that achieved in randomly doped samples. Our experimental methods also provide a realistic approach to create precise arrangements of single spins as coupled quantum bits for memory or information processing purposes.

Magnetic properties of Mn impurities on GaAs (110) surfaces

Adsorption, Segregation and Magnetization of a Single Mn Adatom on the GaAs (110) Surface

Atom-by-Atom Substitution of Mn in GaAs and Visualization of their Hole-Mediated Interactions

Energetics, electronic structure and local magnetism of single 3d impurity in GaAs

Variation of magnetism by defects and impurities in two-dimensional magnetic materials based on spin spiral method: A case of -(Ga, Mn)As

Site Occupation and Electronic-Structure of an Interstitial Mn2+ Impurity in Gap

Jahn-Teller effect and pair anisotropy in wurtzite Ga$_{1-x}$Mn$_x$N

Calculation of impurity density and electron-spin relaxation times in p-type GaAs:Mn

Electronic and optical properties of ferromagnetic GaMnAs in a multi-band tight-binding approach

Electronic-Structure of A Single Manganese Impurity in Aluminum

About anomalous g-factor value of Mn related defects in GaAs:Mn

Mn Distribution and Spin Polarization Inga1−xmnxas

Surface Magnetism of One Monolayer Mn Atoms on GaAs(001) Surface

K-edge XANES of substitutional and interstitial Mn atoms in (Ga,Mn)As

Ab Initio Study Of Electronic And Magnetic Properties Of The C-Codoped Ga1-Xmnxn (10(1)Over-Bar0) Surface

Mapping the wavefunction of transition metal acceptor states in the GaAs surface

Ab initio study of electronic and magnetic properties of the C-codoped Ga 1 − x Mn x N ( 10 1 ¯ 0 ) surface

Anomalous Magnetic Behavior Of Mn-Mn Dimers In The Dilute Magnetic Semiconductor (Ga,Mn)N

Magnetic circular dichroism in GaMnAs: (no) evidence for an impurity band

Dopant-assisted Concentration Enhancement of Substitutional Mn in Si and Ge.

Ab initio study of electronic and magnetic properties of the C-codoped Ga1−xMnxN „101̄0... surface