S. Sanvito
Abstract:We present an extensive density functional theory study of the electronic, magnetic and transport properties of GaAs and AlAs digital ferromagnetic heterostructures. These can be obtained by $\delta$-doping with Mn the GaAs layers of a GaAs/AlAs superlattice. Our analysis spans a range of Mn concentrations and considers the presence of compensating defects such as As antisites.
In the defect-free case all the heterostructures studied present an half-metallic electronic structure. In contrast when As antisites are present the half-metallic state is destroyed and the heterostructures behave as dirty planar metals. In this case they show a large $p$-type metallic conductance in the Mn plane mainly due to majority spin electrons, and an $n$-type hopping-like conductance in the GaAs planes mainly due to minority spin electrons. This suggests that if the As antisites can be kept far from the Mn planes, spatial separation of the different spin currents can be achieved. Finally we show that in the case of AlAs/(Ga,Mn)As digital ferromagnetic heterostructures the AlAs/GaAs valence band offset produces an additional confining potential for the holes responsible for the ferromagnetism. Therefore the ferromagnetic coupling between the Mn ions becomes larger and more robust to the presence of As antisites.
What problem does this paper attempt to address?
The problems that this paper attempts to solve are: By studying the electronic, magnetic, and transport properties of (Ga,Mn)As digital ferromagnetic heterostructures (DFH), understand how to optimize the performance of these materials by controlling the Mn doping concentration and defects (such as arsenic antisite defects As antisites), especially to increase their Curie temperature ($T_C$), in the hope of achieving ferromagnetism at room temperature. This is of great significance for introducing ferromagnetism into the AlAs/GaAs system, thereby realizing the utilization of spin degrees of freedom in electronic devices.
### Main problem decomposition:
1. **Half - metallicity and metallic state**:
- In the absence of defects, all the studied heterostructures exhibit half - metallic electronic structure. However, when arsenic antisite defects exist, the half - metallicity is destroyed, and the heterostructures behave as "dirty planar metals", showing large p - type metallic conductivity (mainly caused by majority - spin electrons) and n - type hopping conductivity (mainly caused by minority - spin electrons).
2. **The influence of arsenic antisite defects**:
- The existence of arsenic antisite defects significantly changes the electronic structure and transport properties of the system. If the arsenic antisite defects can be kept away from the Mn plane, the spatial separation of different spin currents can be achieved.
3. **The increase of Curie temperature**:
- In the AlAs/(Ga,Mn)As digital ferromagnetic heterostructure, the AlAs/GaAs valence - band offset creates an additional hole - confinement potential, which enhances the ferromagnetic coupling between Mn ions, making the ferromagnetic coupling stronger and more stable, even in the presence of arsenic antisite defects.
4. **Theoretical calculation method**:
- The authors carried out detailed calculations using density functional theory (Density Functional Theory, DFT) combined with local spin - density approximation (Local Spin - Density Approximation, LSDA) to explore the electronic, magnetic, and transport properties under different Mn concentrations and defect conditions.
### Core contributions of the paper:
- **Revealed the influence of Mn concentration and defects on DFH performance**, especially how to increase the Curie temperature by regulating Mn concentration and reducing defects.
- **Proposed new methods for regulating DFH properties**, such as enhancing the Curie temperature through band engineering and spatially selective doping.
The solution of these problems has important guiding significance for the development of new spintronics devices based on diluted magnetic semiconductors.