Abstract:The discovery of ferromagnetism in Mn doped GaAs [1] has ignited interest in the development of semiconductor technologies based on electron spin and has led to several proof-of-concept spintronic devices [2-4]. A major hurdle for realistic applications of (Ga,Mn)As, or other dilute magnetic semiconductors, remains their below room-temperature ferromagnetic transition temperature. Enhancing ferromagnetism in semiconductors requires understanding the mechanisms for interaction between magnetic dopants, such as Mn, and identifying the circumstances in which ferromagnetic interactions are maximized [5]. Here we report the use of a novel atom-by-atom substitution technique with the scanning tunnelling microscope (STM) to perform the first controlled atomic scale study of the interactions between isolated Mn acceptors mediated by the electronic states of GaAs. High-resolution STM measurements are used to visualize the GaAs electronic states that participate in the Mn-Mn interaction and to quantify the interaction strengths as a function of relative position and orientation. Our experimental findings, which can be explained using tight-binding model calculations, reveal a strong dependence of ferromagnetic interaction on crystallographic orientation. This anisotropic interaction can potentially be exploited by growing oriented Ga1-xMnxAs structures to enhance the ferromagnetic transition temperature beyond that achieved in randomly doped samples. Our experimental methods also provide a realistic approach to create precise arrangements of single spins as coupled quantum bits for memory or information processing purposes.

Ferromagnetism and metallic state in digital (Ga,Mn)As heterostructures

Electronic and magnetic properties of Mn∕Ge digital ferromagnetic heterostructures: An <i>ab initio</i> investigation

Atom-by-Atom Substitution of Mn in GaAs and Visualization of their Hole-Mediated Interactions

Towards a Fully Ab-Initio Description of the Diluted Magnetic Semiconductor $Ga_{1-x}Mn_{x}As$. Ferromagnetism, Electronic Structure, and Optical Response

Above-room-temperature ferromagnetism in GaSb/Mn digital alloys

Electronic and optical properties of ferromagnetic GaMnAs in a multi-band tight-binding approach

Carrier-Induced Magnetic Ordering Control in a Digital (ga,mn)as Structure

Boundary of Quantum Evolution under Decoherence

DC-transport Properties of Ferromagnetic (ga,mn)as Semiconductors

Exploring Unconventional Ferromagnetism in Hole-doped LaCrAsO: Insights into Charge-Transfer and Magnetic Interactions

Constraints on proximity-induced ferromagnetism in a Dirac semimetal (Cd$_3$As$_2$)/ferromagnetic semiconductor (Ga$_{1-x}$Mn$_x$Sb) heterostructure

Ab Initio Study on the Electronic Structure and Magnetism of MnAs, MnSb, and MnBi

High Temperature Ferromagnetism in GaAs-based Heterostructures with Mn Delta Doping

Density-Functional Theory Study of Half-Metallic Heterostructures: Interstitial Mn in Si

Precise tuning of the Curie temperature of (Ga,Mn)As-based magnetic semiconductors by hole compensation: Support for valence-band ferromagnetism

Electronic- and band-structure evolution in low-doped (Ga,Mn)As

P-Type Codoping Effect in (ga,mn)as: Mn Lattice Location Versus Magnetic Properties

Half-metallic fully compensated ferrimagnetism and multifunctional spin transport properties of Mn3Al

Charge inhomogeneities and transport in semiconductor heterostructures with a manganese $δ$-layer

Stability of ferromagnetism in the half-metallic pnictides and similar compounds: A first-principles study

Structural and magnetic characteristics of MnAs nanoclusters embedded in Be-doped GaAs