Abstract:The injection of a spin-polarized current into a semiconductor, one of the key requirements for spintronics, poses the challenge for computational materials science to possibly screen suitable materials. In a number of theoretical investigations, we have put forward magnetic intermetallic compounds grown epitaxially on Si as promising candidates. We employed density functional theory calculations with the GGA-PBE exchange-correlation functional and the full-potential augmented plane wave plus local orbital (FP-APW+lo) method, as implemented in the WIEN2k package. In the spirit of computational materials science, we investigated the stability and magnetic properties of thin films of the Heusler alloy Co2MnSi, as well as of binary late transition metal monosilicides, in contact with the Si surface. For the Heusler alloy Co2MnSi, we could show that the (001) surface retains the half-metallic character of the bulk if a fully Mn-terminated surface is prepared. At interfaces with Si, a finite density of states at the Fermi energy was found for both spin channels, but the half-metallic behavior recovers only a few layers away from the interface. For the monosilicides of the late 3d-transition metals (Mn, Fe, Co, Ni), we predict a CsCl-like structure that has not yet been observed as bulk compound but may be stabilized epitaxially on Si(001). For very thin films of CoSi and MnSi grown in this structure, our calculations find a ferromagnetic ground state. Recently, we identified the atomic structure of MnSi films on Si(111) which is close to the natural crystal structure of bulk MnSi (B20), and also shows large magnetic moments of the Mn atoms at the surface and interface. All MnSi films have a high degree of spin polarization (between 30% and 50%, depending on film thickness) at the Fermi level, and are thus promising materials for fabricating electrical contacts for spin injection into Si.

Density-Functional Theory Study of Half-Metallic Heterostructures: Interstitial Mn in Si

Theory of the Dirac Half Metal and Quantum Anomalous Hall Effect in Mn-Intercalated Epitaxial Graphene

Transition-Metal Silicides As Materials for Magnet-Semiconductor Heterostructures

Half-metallic Ferromagnetic Properties of Mn-doped MoSe2 and Its Heterostructure

Prediction of MnSiTe<sub>3</sub> as an intrinsic layered half-metal

Ferromagnetism and metallic state in digital (Ga,Mn)As heterostructures

First-Principles Study Of Transition Metal Impurities In Si

Energetic Stability, Electronic Structure, And Magnetism In Mn-Doped Silicon Dilute Magnetic Semiconductors

Charge inhomogeneities and transport in semiconductor heterostructures with a manganese $δ$-layer

First-Principles Study of Ferromagnetism in Epitaxial Si-Mn Thin Films on Si(001)

Large perpendicular magnetic anisotropy, high curie temperature, and half-metallicity in monolayer CrSI induced by substitution doping

First-principles study of a Mn-doped In<sub>2</sub>Se<sub>3</sub> monolayer: Coexistence of ferromagnetism and ferroelectricity with robust half-metallicity and enhanced polarization

First-principles study of a Mn-doped In 2 Se 3 monolayer: Coexistence of ferromagnetism and ferroelectricity with robust half-metallicity and enhanced polarization

Study of half metallicity, structural and mechanical properties in inverse Heusler alloy Mn2ZnSi(1- x)Ge x and a superlattice

Ab Initio Study of Transition-Metal Silicide Films on Si(001)

Probing half-metallicity in Mn 2 CoSi/Si(100) thin film structures using electrical transport measurements towards spintronic applications

First-principles Study of Thin Magnetic Transition-Metal Silicide Films on Si(001)

Covalency, Correlations, and Interlayer Interactions Governing the Magnetic and Electronic Structure of Mn3Si2Te6

Half-metallicity in new Heusler alloys Mn2ScZ (Z = Si, Ge, Sn)

Spintronic properties and stability of the half-Heusler alloys LiMnZ (Z=N, P, Si)

Effect of Mn+2 Doping and Vacancy on the Ferromagnetic Cubic 3C-SiC Structure Using First Principles Calculations