Abstract:The discovery of ferromagnetism in Mn doped GaAs [1] has ignited interest in the development of semiconductor technologies based on electron spin and has led to several proof-of-concept spintronic devices [2-4]. A major hurdle for realistic applications of (Ga,Mn)As, or other dilute magnetic semiconductors, remains their below room-temperature ferromagnetic transition temperature. Enhancing ferromagnetism in semiconductors requires understanding the mechanisms for interaction between magnetic dopants, such as Mn, and identifying the circumstances in which ferromagnetic interactions are maximized [5]. Here we report the use of a novel atom-by-atom substitution technique with the scanning tunnelling microscope (STM) to perform the first controlled atomic scale study of the interactions between isolated Mn acceptors mediated by the electronic states of GaAs. High-resolution STM measurements are used to visualize the GaAs electronic states that participate in the Mn-Mn interaction and to quantify the interaction strengths as a function of relative position and orientation. Our experimental findings, which can be explained using tight-binding model calculations, reveal a strong dependence of ferromagnetic interaction on crystallographic orientation. This anisotropic interaction can potentially be exploited by growing oriented Ga1-xMnxAs structures to enhance the ferromagnetic transition temperature beyond that achieved in randomly doped samples. Our experimental methods also provide a realistic approach to create precise arrangements of single spins as coupled quantum bits for memory or information processing purposes.

Above-room-temperature ferromagnetism in GaSb/Mn digital alloys

Ferromagnetism and metallic state in digital (Ga,Mn)As heterostructures

High Temperature Ferromagnetism in GaAs-based Heterostructures with Mn Delta Doping

Vanishing of the anomalous Hall effect and enhanced carrier mobility in the spin-gapless ferromagnetic Mn2CoGa1-xAlx alloys

Room-Temperature Ferromagnetism of Ga 1− X Mn X N Grown by Low-Pressure Metalorganic Chemical Vapour Deposition

Electronic, Magnetic, and Optical Properties of Mn-doped GaSb: a First-Principles Study

Intrinsic mechanism for high temperature ferromagnetism in GaMnN

Magnetic and spin‐gapless related transport properties in sputtered Mn2CoGa thin films

Atom-by-Atom Substitution of Mn in GaAs and Visualization of their Hole-Mediated Interactions

Structural, magnetic, and transport properties of polycrystalline Mn3Ga0.8Ge0.2 alloy

Room Temperature Ferromagnetism of Gan : Mn Thin Films Grown by Low Pressure Metal-Organic Chemical Vapor Deposition by Mn Periodic Delta-Doping

Ferromagnetism of Mn-doped GaN polycrystalline powders

Half-metallic fully compensated ferrimagnetism and multifunctional spin transport properties of Mn3Al

High-Curie-temperature ferromagnetism in self-organized Ge1−xMnx nanocolumns

Anomalies at the Compensation Temperature in the Zero-Magnetization Ferromagnet (Sm,gd)al2

Magnetic phase transition, magnetoresistance, and anomalous Hall effect in Ga-substituted Y Mn 6 Sn 6 with a ferromagnetic kagome lattice

Magnetism of Amorphous Ge1−xMnx Magnetic Semiconductor Films

Nanoengineering of an Si/MnGe Quantum Dot Superlattice for High Curie-temperature Ferromagnetism.

Room-Temperature Anomalous Hall Effect in Amorphous Si-Based Magnetic Semiconductor

Giant Magnetocaloric and Magnetoresistance Effects in Ferrimagnetic Mn1.9co0.1sb Alloy

Ferromagnetic Properties And Structures Of The Mn-Implanted Gaas Semiconductor