Abstract:Undoped and Si-doped GaN films were grown epitaxially on sapphire by reactive rf sputtering of GaAs (and Si) in Ar-N2 mixture. The resistivity of undoped GaN film grown at 100% N2 was ~2 x 105 {\Omega} cm, which reduced to ~1 {\Omega} cm in Si-doped film, revealing the effect of Si doping. With decrease of N2 from 100% to 75%, the carrier concentration of Si-doped films increased from ~7 x 1018 cm-3 to ~2 x 1019 cm-3, but remained practically unchanged as N2 was decreased to 20%, which is explained by effects due to saturation of Si doping and increase of Ga interstitials as well as compensation by N interstitials and Ga vacancies. Undoped and Si-doped films grown below 20% N2 displayed similar carrier concentrations (~1020 cm-3), due to dominance of Ga interstitials. Both undoped and Si-doped films were degenerate and displayed increase of mobility with carrier concentration and temperature, which was analyzed by the combined effect of ionized impurity and dislocation scattering, using compensation ratio as fitting parameter. At carrier concentrations below 1019 cm-3, the mobility was governed by both ionized impurity and dislocation scattering, while at higher carrier concentrations, ionized impurity scattering was found to dominate, limited by compensation due to acceptors. In spite of the degenerate character, the films displayed a small decrease of carrier concentration with temperature, along with a nearly linear decrease of mobility, which are explained by a marginal increase of compensation ratio with decrease of temperature, taking into account the band edge fluctuation effects.

Electrical Properties of Er-doped In0.53Ga0.47As

Electrically Active Er Doping in Inas, In0.53ga0.47as, and Gaas

Controlling n -Type Carrier Density from Er Doping of InGaAs with MBE Growth Temperature

Properties of Molecular Beam Epitaxially Grown ScAs:InGaAs and ErAs:InGaAs Nanocomposites for Thermoelectricapplications

Electrical Transport in a Semimetal–Semiconductor Nanocomposite

Electronic properties of Bi-doped GaAs(001) semiconductors.

Material Properties and Performance of ErAs:In(Al)GaAs Photoconductors for 1550 Nm Laser Operation

Optical Properties of p-Type GaAs in Far-Infrared Region

Measurement and Modeling of ErAs:In0.53Ga0.47As Nanocomposite Photoconductivity for THz Generation at 1.55 Μm Pump Wavelength

In-plane Thermoelectric Properties of Epitaxial InGaAlAs Films Embedded with ErAs Nanoparticles

Growth and transport properties of InAs thin films on GaAs

Structural Properties of In0.53Ga0.47As Epitaxial Films Grown on Si (111) Substrates by Molecular Beam Epitaxy

Reduced Thermal Conductivity in Er-doped Epitaxial InxGa1−xSb Alloys

X-ray Studies of As-doped GaN Grown by Plasma-Assisted Molecular Beam Epitaxy

Fermi-level pinning in ErAs nanoparticles embedded in III-V semiconductors

Direct observation of electronic band gap and hot carrier dynamics in GeAs semiconductor

Electronic- and band-structure evolution in low-doped (Ga,Mn)As

Electrical transport in epitaxially grown undoped and Si-doped degenerate GaN films

Investigation of Structural, Mechanical, Electronic and Optical Responses of Ga Doped Aluminum Arsenide for Optoelectronic Applications: by First Principles

Carrier Dynamics in InGaAs with Embedded ErAs Nanoislands

The Behavior of Dopant Incorporation and Internal Strain in AlxGa1−xAs0.03Sb0.97 Grown by Molecular Beam Epitaxy