Carrier Dynamics in InGaAs with Embedded ErAs Nanoislands

Abul K. Azad,Rohit P. Prasankumar,Diyar Talbayev,Antoinette J. Taylor,Richard D. Averitt,Joshua M. O. Zide,Hong Lu,Arthur C. Gossard,John F. O'Hara
DOI: https://doi.org/10.1063/1.2989127
IF: 4
2008-01-01
Applied Physics Letters
Abstract:Using time-resolved optical-pump terahertz-probe spectroscopy, we study the ultrafast carrier dynamics in In(0.53)Ga(0.47)As:ErAs, a potential candidate for 1550 nm based terahertz photoconductive detectors. Material growth is performed by codepositing ErAs nanoislands with Be-compensated InGaAs on an InP:Fe substrate using molecular beam epitaxy. The material shows a rapid photoconductivity response following optical excitation. Photoexcitation with similar to 0.5 mu J/cm(2) 800 nm femtosecond laser pulses yields a 3.2 ps carrier lifetime in optical-pump terahertz-probe experiments. We also measure the carrier lifetime using a 1550 nm femtosecond optical pump-probe system, and it is found to agree well with the terahertz measurements. These short lifetimes demonstrate significant potential for implementing terahertz systems using telecommunication based technologies. (C) 2008 American Institute of Physics.
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