Abstract:Ultrafast pump probe measurements on InGaN quantum well (QW) channel based high electron mobility transistor (HEMT) structure enable a direct measurement of the transit/capture time of electrons from GaN buffer layer to InGaN channel layer. Carrier capture time of 75 ± 10 fs is measured and the same is found to be independent of excitation wavelength. However, the capture process is delayed by 160 ± 5 fs when carriers are excited in GaN buffer layer. This happens due to the inclusion of transit time of carriers in GaN layer. It is confirmed by varying the wavelength of excitation where a delay in carrier transit is seen at longer wavelength. It is also seen that the strength of a feature associated with the carriers excited in GaN layer and captured by InGaN QW channel layer mimics the absorption spectrum of GaN, which also confirms that the delay in capture process is caused by the carriers excited in GaN layer. It is found that the capture process can be delayed even up to 240 ± 5 fs when the pump wavelength is kept at 390 nm. It is explained by considering the absorption in a deeper part of GaN layer and via the shallow defect states. Further, it is found that the localization of carriers in InGaN QW channel layer occurs at the time scales of 85 ± 10 fs. The transit/capture/localization time parameters reported in this work provide a crucial set of information, which is essential for modulating the carrier dynamics in InGaN/GaN based HEMTs and other high speed optoelectronic devices.

Study of Rapid Carrier Capture and Relaxation in Inas/gaas Heterostructures

Carrier Capture into InAs/GaAs Quantum Dots Detected by a Simple Degenerate Pump–probe Technique

Ultrafast Carrier Capture and Relaxation in InGaAs Self-Organized Quantum Dots

Detection of Efficient Carrier Capture in Ultrathin Inas/Gaas Layers Using A Degenerate Pump-Probe Technique

Temperature-Dependent Carrier Dynamics In Self-Assembled Ingaas Quantum Dots

Carrier capture in InAs monolayer quantum wells grown on GaAs substrates

Ultrafast Relaxation Character of Nonequilibrium Carriers in GaAs Excited by Femtosecond Laser

Carrier Relaxation and Thermal Activation of Localized Excitons in Self-Organized InAs Multilayers Grown on GaAs Substrates.

Hot Carrier Relaxation Processes in GaAs-GaAlAs Multiple Quantum Well Structures

Ultrafast carrier relaxation dynamics of photoexcited GaAs and GaAs/AlGaAs nanowire array

Carrier Dynamics in InGaAs with Embedded ErAs Nanoislands

Picosecond carrier dynamics in InAs and GaAs revealed by ultrafast electron microscopy

Ultrafast Dynamics Property of GaAs Carrier

Hot Carrier Photoluminescence from Strained InxGa1−xAs/GaAs Single Quantum Wells

Ultrafast carrier dynamics in InGaN quantum well channel based high electron mobility transistor structure

Temperature-Dependent Carrier Tunneling for Self-Assembled Inas/Gaas Quantum Dots with A Gaasn Quantum Well Injector

Differential Transmission Measurement of Phonon Bottleneck in Self-Assembled Quantum Dot Intersubband Relaxation

Picosecond Spin Relaxation in Low-Temperature-Grown Gaas

The thermalization of photoexcited hot carriers in InxGa1−xAsGaAs strained single quantum well structures

Photo-excited Carrier Relaxation Dynamics in Two-Dimensional InSe Flakes.

Exciton Relaxation and Coupling Dynamics in a GaAs/AlxGa1−xAs Quantum Well and Quantum Dot Ensemble