Abstract:A type-II InAs/AlAs$_{0.16}$Sb$_{0.84}$ multiple-quantum well sample is investigated for the photoexcited carrier dynamics as a function of excitation photon energy and lattice temperature. Time-resolved measurements are performed using a near-infrared pump pulse, with photon energies near to and above the band gap, probed with a terahertz probe pulse. The transient terahertz absorption is characterized by a multi-rise, multi-decay function that captures long-lived decay times and a metastable state of for an excess-photon energy of $>100$ meV. For sufficient excess-photon energy, excitation of the metastable state is followed by a transition to the long-lived states. Excitation dependence of the long-lived states map onto a near-direct band gap ($E{_g}$) density of states with an Urbach tail below $E{_g}$. As temperature increases, the long-lived decay times increase $<E{_g}$, due to the increased phonon interaction of the unintentional defect states, and by phonon stabilization of the hot carriers $>E{_g}$. Additionally, Auger (and/or trap-assisted Auger) scattering above the onset of the plateau may also contribute to longer hot-carrier lifetimes. Meanwhile, the initial decay component shows strong dependence on excitation energy and temperature, reflecting the complicated initial transfer of energy between valence-band and defect states, indicating methods to further prolong hot carriers for technological applications.

Hot Carrier Relaxation Processes in GaAs-GaAlAs Multiple Quantum Well Structures

Hot Carrier Relaxation Processes and Nonequilibrium Phonon Effect in Multiple Quantum Well Structures

Hot electron effect in GaAs/ AlGaAs multiple quantum wells

The thermalization of photoexcited hot carriers in InxGa1−xAsGaAs strained single quantum well structures

Hot Carrier Photoluminescence from Strained InxGa1−xAs/GaAs Single Quantum Wells

Observation of Hot Electron Relaxation in GaAs/AlGaAs Multiple Quantum Wells by Excitation Spectroscopy

The Excitonic Properties and Temperature Behaviour of the Photoluminescence from GaAs-GaAlAs Multiple Quantum Well Structures

The Role of Nonequilibrium LO Phonons, Pauli Exclusion, and Intervalley Pathways on the Relaxation of Hot Carriers in InGaAs Multi-Quantum-Well Structures

Ultrafast carrier relaxation dynamics of photoexcited GaAs and GaAs/AlGaAs nanowire array

High Magnetic Field Studies Of Charged Exciton Localization In Gaas/Alxga1-Xas Quantum Wells

Hot-carrier dynamics in InAs/AlAsSb multiple-quantum wells

Ultrafast Relaxation Character of Nonequilibrium Carriers in GaAs Excited by Femtosecond Laser

Carrier Relaxation and Thermal Activation of Localized Excitons in Self-Organized InAs Multilayers Grown on GaAs Substrates.

Carrier Lifetime and Electron Spin Relaxation Time in (110)-Oriented GaAs–AlGaAs Quantum-Well Micro-Posts

Exciton Relaxation and Coupling Dynamics in a GaAs/AlxGa1−xAs Quantum Well and Quantum Dot Ensemble

Self-Pulsation Dynamics in GaAs/AlGaAs Quantum Cascade Lasers

Study of Rapid Carrier Capture and Relaxation in Inas/gaas Heterostructures

Ultrafast Dynamics Property of GaAs Carrier

Spectral Broadening and Population Relaxation in A Gaas Interfacial Quantum Dot Ensemble and Quantum Well Nanostructure

Complex exciton dynamics with elevated temperature in a GaAsSb/GaAs quantum well heterostructure

Study on Carrier Lifetimes in InGaN Multi‐quantum Well with Different Barriers by Time‐resolved Photoluminescence