Abstract:A femtosecond electron‐based versatile microscopy that combines scanning ultrafast electron microscopy imaging and time‐resolved cathodoluminescence detection allows for directly visualizing and decoupling complex carrier dynamics involved in surface and bulk of semiconductors with unprecedented spatiotemporal and energetic resolutions. Carrier dynamics detection in different dimensions (space, time, and energy) with high resolutions plays a pivotal role in the development of modern semiconductor devices, especially in low‐dimensional, high‐speed, and ultrasensitive devices. Here, a femtosecond electron‐based versatile microscopy is reported that combines scanning ultrafast electron microscopy (SUEM) imaging and time‐resolved cathodoluminescence (TRCL) detection, which allows for visualizing and decoupling different dynamic processes of carriers involved in surface and bulk in semiconductors with unprecedented spatiotemporal and energetic resolutions. The achieved spatial resolution is better than 10 nm, and the temporal resolutions for SUEM imaging and TRCL detection are ≈500 fs and ≈4.5 ps, respectively, representing state‐of‐the‐art performance. To demonstrate its unique capability, the surface and bulk carrier dynamics involved in n‐type gallium arsenide (GaAs) are directly tracked and distinguished. It is revealed, in real time and space, that hot carrier cooling, defect trapping, and interband‐/defect‐assisted radiative recombination in the energy domain result in ordinal super‐diffusion, localization, and sub‐diffusion of carriers at the surface, elucidating the crucial role of surface states on carrier dynamics. The study not only gives a comprehensive physical picture of carrier dynamics in GaAs, but also provides a powerful platform for exploring complex carrier dynamics in semiconductors for promoting their device performance.

Detection of Efficient Carrier Capture in Ultrathin Inas/Gaas Layers Using A Degenerate Pump-Probe Technique

Carrier Capture into InAs/GaAs Quantum Dots Detected by a Simple Degenerate Pump–probe Technique

Study of Rapid Carrier Capture and Relaxation in Inas/gaas Heterostructures

Carrier capture in InAs monolayer quantum wells grown on GaAs substrates

Carrier Dynamics in InGaAs with Embedded ErAs Nanoislands

Surface-state-related carrier dynamics of GaAs determined by UV-visible pump-probe terahertz spectroscopy

Ultrafast carrier dynamics in InGaN quantum well channel based high electron mobility transistor structure

Photoluminescence characterization of interlayer carrier injection from InGaAs quantum well to InGaAs surface quantum dots with respect to GaAs spacer thickness

Carrier Recirculation Induced High-Gain Photodetector Based on van der Waals Heterojunction

Picosecond carrier dynamics in InAs and GaAs revealed by ultrafast electron microscopy

Investigations of a coherently driven semiconductor optical cavity QED system

A method for measuring carrier capture cross sections of deep centers with eliminating the influence of inhomogeneous carrier distribution

Ultrafast Carrier Capture and Relaxation in InGaAs Self-Organized Quantum Dots

Transient Saturation Absorption Spectroscopy Excited Near the Band Gap at High Excitation Carrier Density in GaAs

Probing energy barriers and quantum confined states of buried semiconductor heterostructures with ballistic carrier injection: An experimental study

Precise Optical Measurement of Carrier Mobilities Using Z-scanning Laser Photoreflectance

A Femtosecond Electron‐Based Versatile Microscopy for Visualizing Carrier Dynamics in Semiconductors Across Spatiotemporal and Energetic Domains

Engineering Ultrafast Carrier Dynamics at the Graphene/GaAs Interface by Bulk Doping Level

Investigation of Carrier Compensation Traps in N−-Gan Drift Layer by High-Temperature Deep-Level Transient Spectroscopy

Photoexcited carrier diffusion dependence of differential reflection dynamics in InAsxP1−xInP (x ≤ 0.35) strained-multiple-quantum wells

Femtosecond near-field scanning optical microscopy