Abstract:In this paper, the modulated laser-induced excess minority carrier density wave (CDW) of bipolar semiconductor is developed. An analytical expression of CDW in frequency domain is introduced. The numerical simulations are carried out to analyze the effects of minority carrier transport parameters (minority carrier lifetime, diffusion coefficient, and two surfaces recombination velocities) on response of laser-induced photocarrier radiometry (PCR) signal to frequency for semiconductor silicon wafer. The PCR amplitude increases with increasing the minority carrier lifetime, and decreased with increasing the carrier diffusion coefficient and surface recombination velocity. In contrast, the PCR phase lag decreases with increasing the minority carrier lifetime, and increases with increasing the carrier diffusion coefficient and surface recombination velocity. The silicon (Si) wafer with an artificial defect (mechanical scratch) on the surface is experimentally investigated by PCR scanning image system. The distribution maps of the minority carrier transport parameters are obtained by best-fitting method which is based on the carrier density wave analytical expression, and the influences of the artificial defect on carrier transport parameters are discussed in detail. The experimental results indicate that the surface recombination velocity and carrier diffusivity at artificial damaged location are dramatically increased compared with those in the healthy region. The carrier bulk lifetime of whole Si wafer is obtained to be about 38.33 μs by PCR scanning image measurements. Simultaneously, quasi steady-state photoconductance (QSSPC) method is used to measure the carrier effective lifetime of Si wafer, and it is about 33.85 μs. Therefore, the carrier bulk lifetime of Si wafer by PCR scanning image measurement is in good agreement with the QSSPC measurement. However, QSSPC measurement could obtain only the carrier effective lifetime of Si wafer. Furthermore, PCR scanning image measurement can be employed to measure the carrier transport parameters with high resolution in comparison with QSSPC measurement, and to evaluate the localized imperfection.

Precise Optical Measurement of Carrier Mobilities Using Z-scanning Laser Photoreflectance

Measuring Minority Carrier Diffusion Length Using High-Injection Scanning Photocurrent Microscopy

Direct Measurement for Nanoscale Vertical Carrier Diffusion on Semiconductor Surface—an Approach Toward Scanning Diffusion Microscopy

Probing carrier and phonon transport in semiconductors all at once through frequency-domain photo-reflectance

Probing carrier and phonon transport in semiconductors all at once through frequency-domain photoreflectance

A Light Spot Scanner Photo-Current Technique to Measure Surface Recombination Velocity of Semiconductor

Cross-sectional profile of photocarrier mobility in thin film solar cell via nongeminate recombination and charge extraction by linearly increasing voltage (cs-p-CELIV)

Cross-sectional profile of photocarrier mobility in thin-film solar cells via multimolecular recombination and charge extraction by linearly increasing voltage (cs-p-CELIV)

Generalized Transport-Band Field-Effect Mobility in Disordered Organic and Inorganic Semiconductors

Consistent optical and electrical determination of carrier concentrations for the accurate modeling of the transport properties of n-type Ge

Investigations of a coherently driven semiconductor optical cavity QED system

Femtosecond near-field scanning optical microscopy

New Method of Mobility Measurement for Organic Semiconductors by Optoelectronic Coupling

Towards Accurate Predictions of Carrier Mobilities and Thermoelectric Performances in 2D Materials

Experimental Study on Scan Imaging of Silicon Wafer by Laser-Induced Photocarrier Radiometry

Contactless determination and parametrization of charge carrier mobility in silicon as a function of injection level and temperature using time-resolved THz spectroscopy

How to accurately measure the mobility and viscosity of two-dimensional carriers?

Mobility Measurement With Organic Optoelectronic Couplers

Scanning near-field optical spectroscopy and carrier transport based analysis in mesoscopic regions for two-dimensional semiconductors

A Fast, Simple Wafer-Level Hall-mobility Measurement Technique

Mercury-probe measurement of electron mobility in β-Ga2O3 using junction moderated dielectric relaxation