Abstract:Field-effect mobility mu(FE) and its activation energy in disordered inorganic and organic semiconductor thin-film transistors is strongly dependent on bias conditions. This implies a nonlinear dependence of conductivity on carrier concentration, which stems from the high density of trapped carriers while only a few contribute to conduction. When mu(FE) is extracted from measurement data, the nonlinear conductivity-concentration dependence is averaged over the semiconducting film. Consequently, mu(FE) becomes mingled with device attributes such as gate capacitance in addition to terminal bias, which undermines the physical interpretation of mu(FE) and subsequent comparison of measured values for different devices and different semiconductors. This paper presents an effective mobility mu(eff) description at a reference carrier concentration, which separates the physical conductivity-concentration dependence from the device and bias attributes, enabling comparison of carrier transport in disordered semiconductors. In particular, by using the generalized concept of mobility edge and exponential band tails we show that mu(eff) can be applied to a wide range of inorganic and organic semiconductors. Indeed, three parameters, viz., mu(eff), exponential band tail slope T(t), and bias-independent activation energy E(a0) of mu(eff), can describe carrier transport in the transistor together with its bias and temperature dependence.

A Fast, Simple Wafer-Level Hall-mobility Measurement Technique

Wafer-Level Hall Measurement on Sic Mosfet

A New Ultra-Fast Single Pulse Technique (UFSP) for Channel Effective Mobility Evaluation in MOSFETs

New methods for the direct extraction of mobility and series resistance from a single ultra-scaled device

A New Mobility Extraction Technique Based on Simultaneous Ultrafast $i_{d}$ – $v_{g}$ and $c_{\rm Cg}$ – $v_{g}$ Measurements in MOSFETs

Mobility Enhancement Techniques for Ge and GeSn MOSFETs

Generalized Transport-Band Field-Effect Mobility in Disordered Organic and Inorganic Semiconductors

A Novel Method to Extract Channel Mobility and Parasitic Resistance of 2-D Material MOSFETs

Phonon-limited carrier mobilities and Hall factors in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mn>4</mml:mn><mml:mi>H</mml:mi></mml:mrow></mml:math> -SiC from first principles

New Method of Mobility Measurement for Organic Semiconductors by Optoelectronic Coupling

Study of Carrier Mobilities in 4H-SiC MOSFETS Using Hall Analysis

Measuring the Local Mobility of Graphene on Semiconductors

Mobility and Threshold Voltage Extraction in Transistors with Gate-Voltage-Dependent Contact Resistance

Channel Electron Mobility in 4h–sic Lateral Junction Field Effect Transistors

"Shift and Match" (S&M) method for channel mobility correction in degraded MOSFETs

Mercury-probe measurement of electron mobility in β-Ga2O3 using junction moderated dielectric relaxation

Mos Interface And Channel Engineering For High-Mobility Ge/Iii-V Cmos

Quantifying Hole Mobility Degradation in Pmosfets with a Strained-Si0.7ge0.3 Surface-Channel under an ALD TiN/Al2O3/HfAlOx/Al2O3 Gate Stack

Integration of on-chip field-effect transistor switches with dopantless Si/SiGe quantum dots for high-throughput testing

A new technique to determine the average low-field electron mobility in MESFET using C-V measurement