Abstract:ErAs:InGaAlBiAs is a semiconductor nanocomposite that is engineered for a photoconductive switch material that is designed for the detection of THz pulses using telecom wavelength excitation. The band engineering allows a bandgap compatible with a 1550 nm pump while having an effective Fermi level deep in the bandgap to have high dark resistance. Terahertz technology has the potential to have a large impact in myriad fields, such as biomedical science, spectroscopy, and communications. Making these applications practical requires efficient, reliable, and low‐cost devices. Photoconductive switches (PCS), devices capable of emitting and detecting terahertz pulses, are a technology that needs more efficiency when working at telecom wavelength excitation (1550 nm) to exploit the advantages this wavelength offers. ErAs:InGaAs is a semiconductor nanocomposite working at this energy; however, high dark resistivity is challenging due to a high electron concentration as the Fermi level lies in the conduction band. To increase dark resistivity, ErAs:InGaAlBiAs material is used as the active material in a PCS detecting Terahertz pulses. ErAs nanoparticles reduce the carrier lifetime to subpicosecond values required for short temporal resolution, while ErAs pins the effective Fermi level in the host material bandgap. Unlike InGaAs, InGaAlBiAs offers enough freedom for band engineering to have a material compatible with a 1550 nm pump and a Fermi level deep in the bandgap, meaning low carrier concentration and high dark resistivity. Band engineering is possible by incorporating aluminum to lift the conduction band edge to the Fermi level and bismuth to keep a bandgap compatible with 1550 nm excitation.

ErAs:In(Al)GaAs Photoconductor-Based Time Domain System with 4.5 THz Single Shot Bandwidth and Emitted Terahertz Power of 164 Μw.

Pulsed Thz Time Domain System with Eras: In(Al) Gaas Photoconductors

Ultrafast Time-Response Characteristics Of Algaas Materials

Material Properties and Performance of ErAs:In(Al)GaAs Photoconductors for 1550 Nm Laser Operation

Terahertz Emission Characteristics of ErAs:InGaAs-based Photoconductive Antennas Excited at 1.55 Μm

High Dynamic Range THz Systems Using ErAs:In(Al)GaAs Photoconductors

Broadband Terahertz Equivalent-Time Sampling System Based on a Photoconductive Antenna

Performance of a 1030 Nm Driven ErAs: InGaAs Photoconductive Receiver at High THz Average Power

Continuous-wave 1550 Nm Operated Terahertz System Using ErAs:In(Al)GaAs Photo-Conductors with 52 Db Dynamic Range at 1 THz

Photoconductive receivers at 1030 nm for high average power pulsed THz detection

Measurement and Modeling of ErAs:In0.53Ga0.47As Nanocomposite Photoconductivity for THz Generation at 1.55 Μm Pump Wavelength

1.55 Μ M Ultrafast Photoconductive Switches Based on ErAs:InGaAs

Performance of Photoconductive Receivers at 1030 nm Excited by High Average Power THz Pulses

Carrier Dynamics in InGaAs with Embedded ErAs Nanoislands

ErAs Enhanced Active Photonic THz Components

High-power single-cycle THz emission from large-area photoconductive emitters at 400 kHz

1550 nm compatible ultrafast photoconductive material based on a GaAs/ErAs/GaAs heterostructure

Band Engineering of ErAs:InGaAlBiAs Nanocomposite Materials for Terahertz Photoconductive Switches Pumped at 1550 nm

AlGaAs Emitter∕gaas Barrier Terahertz Detector with a 2.3 THz Threshold

Continuous-wave Terahertz System with 50 Db Dynamic Range at 1 THz Using a N-I-pn-i-p Superlattice Photomixer and an ErAs:InGaAs Photoconductor Operated at 1550 Nm

N-Type GaAs/AlGaAs Heterostructure Detector with a 32 THz Threshold Frequency