ErAs Enhanced Active Photonic THz Components

M. Mendez Aller,U. Nandi,H. Lu,J. C. Norman,A. C. Gossard,S. Preu
DOI: https://doi.org/10.1109/iwmts.2018.8454690
2018-01-01
Abstract:We present active, telecom-wavelength compatible THz components with enhanced performance by introducing ErAs precipitates. First, we review how an ErAs monolayer in between p-i-n diodes enables serial connection of these diodes, reducing the total capacitance and thus decoupling the existing trade-off between RC- and transit time roll-off. In the second part of the paper, latest results with ErAs:In(Al)GaAs photoconductive devices are shown. Continous-wave (CW) receivers show an almost flat frequency response up to 0.5 THz with a noise equivalent power (NEP) of 20±10 fW/Hz. Under pulsed operation, we achieved 40 dB dynamic range at 4.1 THz with a system only using ErAs:In(Al)GaAs photoconductors as source and receiver.
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