Abstract:Emitters based on photoconductive materials excited by ultrafast lasers are well established and popular devices for THz generation. However, so far, these emitters, both photoconductive antennas and large area emitters, were mostly explored using driving lasers with moderate average powers (either fiber lasers with up to hundreds of milliwatts or Ti:Sapphire systems up to few watts). In this paper, we explore the use of high power, MHz repetition rate Ytterbium (Yb) based oscillator for THz emission using a microstructured large area photoconductive emitter, consist of semi insulating GaAs with a 10 by 10 mm2 active area. As a driving source, we use a frequency doubled home built high average power ultrafast Yb oscillator, delivering 22 W of average power, 115 fs pulses with 91 MHz repetition rate at a central wavelength of 516 nm. When applying 9 W of average power (after an optical chopper with a duty cycle of 50 percent) on the structure without optimized heatsinking, we obtain 65 uW THz average power, 4 THz bandwidth; furthermore, we safely apply up to 18 W of power on the structure without observing damage. We investigate the impact of excitation power, bias voltage, optical fluence, and their interplay on the emitter performance and explore in detail the sources of thermal load originating from electrical and optical power. Optical power is found to have a more critical impact on LAE saturation than electrical power, thus optimized heatsinking will allow us to improve the conversion efficiency in the near future towards much higher emitter power. This work paves the way towards achieving hundreds of MHz or even GHz repetition rates, high power THz sources based on photoconductive emitters, that are of great interest for example for future THz imaging applications.

Performance of a 1030 Nm Driven ErAs: InGaAs Photoconductive Receiver at High THz Average Power

Performance of Photoconductive Receivers at 1030 nm Excited by High Average Power THz Pulses

Photoconductive receivers at 1030 nm for high average power pulsed THz detection

High-power single-cycle THz emission from large-area photoconductive emitters at 400 kHz

ErAs:In(Al)GaAs Photoconductor-Based Time Domain System with 4.5 THz Single Shot Bandwidth and Emitted Terahertz Power of 164 Μw.

Pulsed Thz Time Domain System with Eras: In(Al) Gaas Photoconductors

High Dynamic Range THz Systems Using ErAs:In(Al)GaAs Photoconductors

Continuous-wave 1550 Nm Operated Terahertz System Using ErAs:In(Al)GaAs Photo-Conductors with 52 Db Dynamic Range at 1 THz

ErAs Enhanced Active Photonic THz Components

Microstructured large-area photoconductive terahertz emitters driven at high average power

Material Properties and Performance of ErAs:In(Al)GaAs Photoconductors for 1550 Nm Laser Operation

Highly Efficient and Electrically Robust Carbon Irradiated SI-GaAs Based Photoconductive THz Emitters

High Power Telecommunication-Compatible Photoconductive Terahertz Emitters Based on Plasmonic Nano-Antenna Arrays

Ultrabroadband and Multiband Infrared/terahertz Photodetectors with High Sensitivity

Terahertz Emission Characteristics of ErAs:InGaAs-based Photoconductive Antennas Excited at 1.55 Μm

Broadband THz detection from 0.1 to 22 THz with large area field-effect transistors

Measurement and Modeling of ErAs:In0.53Ga0.47As Nanocomposite Photoconductivity for THz Generation at 1.55 Μm Pump Wavelength

Detection of nanosecond-scale, high power THz pulses with a field effect transistor.

High intensity study of THz detectors based on field effect transistors

Continuous-wave Terahertz System with 50 Db Dynamic Range at 1 THz Using a N-I-pn-i-p Superlattice Photomixer and an ErAs:InGaAs Photoconductor Operated at 1550 Nm

Broadband THz Detection from 01 to 22 THz with Large Area Field-Effect Transistors