High Dynamic Range THz Systems Using ErAs:In(Al)GaAs Photoconductors

Uttam Nandi,Fand R. Faridi,Anuar D. J. Fernandez Olvera,Justin Norman,Hong Lu,Arthur C. Gossard,Sascha Preu
DOI: https://doi.org/10.1109/imws-amp.2019.8880067
2019-01-01
Abstract:This paper reviews progress on ErAs:In(Al)GaAs photomixers for operation with telecom lasers at 1550 nm, including linearity and absorption coefficient measurements, specifications, packaging example, and applications in vector spectrometry. We have achieved a receiver noise equivalent power as low as 1.81 fW/Hz at 188 GHz under continuous-wave operation and a bandwidth of more than 6 THz and a peak dynamic range of 89 dB under pulsed operation.
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