Abstract:We report on the response characteristics of plasmonic terahertz field-effect transistors (TeraFETs) fed with femtosecond and picosecond pulses. Varying the pulsewidth ( ${t}_{textit {pw}}$ ) from 10<sup>−15</sup> s to 10<sup>−10</sup> s under a constant input power condition revealed two distinctive pulse detection modes. In the short pulse mode ( ${t}_{textit {pw}} ll {L}/{s}$ , where ${L}$ is the gated channel length and ${s}$ is the plasma velocity), the source-to-drain voltage response is a sharp pulse oscillatory decay preceded by a delay time on the order of ${L}/{s}$ . The plasma wave travels along the channel like the shallow water wave with a relatively narrow wave package. In the long pulse mode ( ${t}_{textit {pw}} > {L}/{s}$ ), the response profile has two oscillatory decay processes and the propagation of plasma wave is analogous to an oscillating rod with one side fixed. The ultimate response time at the long pulse mode is significantly higher than that under the short pulse conditions. The detection conditions under the long pulse mode are close to the step response condition, and the response time conforms well to the analytical theory for the step function response. The simulated waveform agrees well with the measured pulse response. Our results show that the measurements of the pulse response enable the material parameter extraction from the pulse response data (including the effective mass, kinematic viscosity, and momentum relaxation time).

Detection of nanosecond-scale, high power THz pulses with a field effect transistor.

Picosecond-Scale Terahertz Pulse Characterization with Field-Effect Transistors

Ultra-fast Transistor-Based Detectors for Precise Timing of Near Infrared and THz Signals.

Broadband THz Detection from 01 to 22 THz with Large Area Field-Effect Transistors

Broadband THz detection from 0.1 to 22 THz with large area field-effect transistors

Analysis and Design of Semiconductor Detector for High-Power Terahertz Pulse

Symmetry Effects in Broadband, Room-Temperature Field Effect Transistor THz Detectors

High intensity study of THz detectors based on field effect transistors

Ultrafast voltage-tunable detectors for Terahertz radiation operating above 100K

Helmholtz-Zentrum Dresden-Rossendorf (HZDR) Broadband Terahertz Detection With Zero-Bias Field-Effect Transistors Between 100 GHz and 11.8 THz With a Noise Equivalent Power of 250 pW/√Hz at 0.6 THz

Broadband Terahertz Detection With Zero-Bias Field-Effect Transistors Between 100 GHz and 11.8 THz With a Noise Equivalent Power of 250 pW/ $\sqrt{\text{Hz}}$ at 0.6 THz

Photoconductive receivers at 1030 nm for high average power pulsed THz detection

Broadband Thz Detection and Homodyne Mixing Using Gaas High-Electron-Mobility Transistor Rectifiers

An Overmoded Structure for the Narrowband High-Power Terahertz Pulse Detection

Single-shot Measurement of THz Pulses

Detection of 3.0 THz Wave with a Detector in 65 Nm Standard CMOS Process.

Ultrashort Pulse Detection and Response Time Analysis Using Plasma-Wave Terahertz Field-Effect Transistors

Femtosecond diagnostics of ultrashort electron beam using a pinhole-based THz-driven deflector

Performance of Photoconductive Receivers at 1030 nm Excited by High Average Power THz Pulses

Ultrafast electron diffractometer with Terahertz-driven pulse compression

Single-Shot Spatial-Temporal Electric Field Measurement Of Intense Terahertz Pulses From Coherent Transition Radiation