Toward a 1550 nm InGaAs photoconductive switch for terahertz generation.

Kimani K Williams,Z D Taylor,J Y Suen,Hong Lu,R S Singh,A C Gossard,E R Brown
DOI: https://doi.org/10.1364/OL.34.003068
IF: 3.6
2009-01-01
Optics Letters
Abstract:We report a terahertz (THz) photoconductive switch made from a composite of metal ErAs nanoparticles embedded in In(0.53)Ga(0.47)As and coupled to a square spiral antenna. The THz output power was measured in a 77 K cryostat by using a standard hyperhemisphere-lens package, a Golay cell outside the cryostat, and a quasi-optical filter bank for spot frequency spectral measurements. Results indicate an average output power of similar to 12 mu W at 22 V bias using 140 mW of optical pump power from a subpicosecond fiber mode-locked laser. In addition, the THz spectra displayed invariance to bias voltage despite operating near impact ionization. (C) 2009 Optical Society of America
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