Abstract:ErAs:InGaAlBiAs is a semiconductor nanocomposite that is engineered for a photoconductive switch material that is designed for the detection of THz pulses using telecom wavelength excitation. The band engineering allows a bandgap compatible with a 1550 nm pump while having an effective Fermi level deep in the bandgap to have high dark resistance. Terahertz technology has the potential to have a large impact in myriad fields, such as biomedical science, spectroscopy, and communications. Making these applications practical requires efficient, reliable, and low‐cost devices. Photoconductive switches (PCS), devices capable of emitting and detecting terahertz pulses, are a technology that needs more efficiency when working at telecom wavelength excitation (1550 nm) to exploit the advantages this wavelength offers. ErAs:InGaAs is a semiconductor nanocomposite working at this energy; however, high dark resistivity is challenging due to a high electron concentration as the Fermi level lies in the conduction band. To increase dark resistivity, ErAs:InGaAlBiAs material is used as the active material in a PCS detecting Terahertz pulses. ErAs nanoparticles reduce the carrier lifetime to subpicosecond values required for short temporal resolution, while ErAs pins the effective Fermi level in the host material bandgap. Unlike InGaAs, InGaAlBiAs offers enough freedom for band engineering to have a material compatible with a 1550 nm pump and a Fermi level deep in the bandgap, meaning low carrier concentration and high dark resistivity. Band engineering is possible by incorporating aluminum to lift the conduction band edge to the Fermi level and bismuth to keep a bandgap compatible with 1550 nm excitation.

Plasmon-enhanced LT-GaAs/AlAs heterostructure photoconductive antennas for sub-bandgap terahertz generation

Plasmon-Enhanced below Bandgap Photoconductive Terahertz Generation and Detection

Terahertz Emission Characteristics of ErAs:InGaAs-based Photoconductive Antennas Excited at 1.55 Μm

Nanoplasmonics enhanced terahertz sources

1550 nm compatible ultrafast photoconductive material based on a GaAs/ErAs/GaAs heterostructure

Material Properties and Performance of ErAs:In(Al)GaAs Photoconductors for 1550 Nm Laser Operation

Continuous-wave 1550 Nm Operated Terahertz System Using ErAs:In(Al)GaAs Photo-Conductors with 52 Db Dynamic Range at 1 THz

Generation of THz Radiation by (100), (110), and (111)A-Oriented Multiple Pseudomorphic InGaAs/GaAs Quantum Wells and Photoconductive Antennas

Design and Fabrication of Plasmonic Tuned THz Detectors by Periodic Hole Structures

Measurement and Modeling of ErAs:In0.53Ga0.47As Nanocomposite Photoconductivity for THz Generation at 1.55 Μm Pump Wavelength

Effect of heteroepitaxial growth on LT-GaAs: ultrafast optical properties

Extending the Tunable Plasma Wavelength in III–V Semiconductors from the Mid‐Infrared to the Short‐Wave Infrared by Embedding Self‐Assembled ErAs Nanostructures in GaAs

ErAs:In(Al)GaAs Photoconductor-Based Time Domain System with 4.5 THz Single Shot Bandwidth and Emitted Terahertz Power of 164 Μw.

Emission of terahertz radiation from dual grating gate plasmon-resonant emitters fabricated with InGaP/InGaAs/GaAs material systems

High Power Telecommunication-Compatible Photoconductive Terahertz Emitters Based on Plasmonic Nano-Antenna Arrays

High Dynamic Range THz Systems Using ErAs:In(Al)GaAs Photoconductors

High power terahertz generation from ErAs: InGaAs plasmonic photomixers

Use of THz Photoconductive Sources to Characterize Tunable Graphene RF Plasmonic Antennas

Significant Radiation Enhancement in Photoconductive Terahertz Emitters by Incorporating Plasmonic Contact Electrodes

Band Engineering of ErAs:InGaAlBiAs Nanocomposite Materials for Terahertz Photoconductive Switches Pumped at 1550 nm

Use of Self-assembled Plasmonic Hole Arrays on AlGaAs/GaAs 2DEG for Large Area Terahertz Applicaton