Growth and transport properties of InAs thin films on GaAs

Zhou Hongwei,Zeng Yiping,Wang Hongmei,Dong Jianrong,Zhu Zhanping,Pan Liang,Kong Meiying

DOI: https://doi.org/10.1016/S0022-0248(98)00161-4

IF: 1.8

1998-01-01

Journal of Crystal Growth

Abstract:High-quality InAs epitaxial layers have been grown on (100) oriented semi-insulating GaAs substrates by MBE. The transport properties of largely lattice mismatched InAs/GaAs heterojunctions have been investigated by Hall effect measurements down to 10K. In spite of a high dislocation density at the heterointerface, very high electron mobilities are obtained in the InAs thin films. By doping Si into the layer far from the InAs/GaAs interface, we found that the doped samples have higher electron mobility than that of the undoped samples with the same thickness. The mobility demonstrates a pronounced minimum around 300K for the undoped sample. But for Si-doped samples, no pronounced minimum has been found. Such abnormal behaviours are explained by the parallel conduction from the quasi-bulk carriers and interface carriers. These high-mobility InAs thin films are found to be suitable materials for making Hall elements.