Abstract:High-quality GaAs films have been epitaxially grown on Si (111) substrates by inserting an InxGa1−xAs interlayer with proper In composition by molecular beam epitaxy (MBE). The effect of InxGa1−xAs (0 < x < 0.2) interlayers on the properties of GaAs films grown on Si (111) substrates by MBE has been studied in detailed. Due to the high compressive strain between InGaAs and Si, InGaAs undergoes partial strain relaxation. Unstrained InGaAs has a larger lattice constant than GaAs. Therefore, a thin InGaAs layer with proper In composition may adopt a close lattice constant with that of GaAs, which is beneficial to the growth of high-quality GaAs epilayer on top. It is found that the proper In composition in InxGa1−xAs interlayer of 10% is beneficial to obtaining high-quality GaAs films, which, on the one hand, greatly compensates the misfit stress between GaAs film and Si substrate, and on the other hand, suppresses the formation of multiple twin during the heteroepitaxial growth of GaAs film. However, when the In composition does not reach the proper value (∼10%), the InxGa1−xAs adopts a lower strain relaxation and undergoes a lattice constant smaller than unstrained GaAs, and therefore introduces compressive stress to GaAs grown on top. When In composition exceeds the proper value, the InxGa1−xAs will adopt a higher strain relaxation and undergoes a lattice constant larger than unstrained GaAs, and therefore introduces tensile stress to GaAs grown on top. As a result, InxGa1−xAs interlayers with improper In composition introduces enlarged misfit stress to GaAs epilayers grown on top, and deteriorates the quality of GaAs epilayers. This work demonstrates a simple but effective method to grow high-quality GaAs epilayers and brings up a broad prospect for the application of GaAs-based optoelectronic devices on Si substrates.

Effect of InxGa1 − Xas Interlayer on the Properties of In0.3Ga0.7As Epitaxial Films Grown on Si (111) Substrates by Molecular Beam Epitaxy

Effect of Ingaas Interlayer on the Properties of Gaas Grown on Si (111) Substrate by Molecular Beam Epitaxy

Structural Properties of In0.53Ga0.47As Epitaxial Films Grown on Si (111) Substrates by Molecular Beam Epitaxy

Design of InxGa1−xAs Buffer Layers for Epitaxial Growth of High-Quality In0.3Ga0.7As Films on GaAs Substrates

Achieving High-Quality In0.3ga0.7as Films on Gaas Substrates by Low-Temperature Molecular Beam Epitaxy

Epitaxial InAs Films on GaSb Substrate and Study on Optical Properties

Epitaxy of GaAs thin film with low defect density and smooth surface on Si substrate

Quality-enhanced In0.3Ga0.7As Film Grown on GaAs Substrate with an Ultrathin Amorphous In0.6Ga0.4As Buffer Layer

The Effect of InGaAs/GaAs Superlattices on GaAs Epilayer Grown on Si (100) Substrate

Effect of the Al0.3Ga0.7As Interlayer Thickness Upon the Quality of GaAs on a Ge Substrate Grown by Metal-Organic Chemical Vapor Deposition

Initial stage of InSb heteroepitaxial growth on GaAs (111)A: effect of thin InAs interlayers

Interface Design And Properties In Inas/Gasb Type-Ii Superlattices Grown By Molecular Beam Epitaxy

Characterization at atomic scale of epitaxially grown In 0.1Ga 0.86As/GaAs(4×3) surface

Growth And Characterization Of Gaxin1-Xas1-Ysby Epitaxial Layers Grown By Lp-Mocvd

Influence of Ga(Al)As substrates on surface morphology and critical thickness of InGaAs quantum dots

Influence Of Gaas(001) Pregrowth Surface Morphology And Reconstruction On The Growth Of Ingaas Layers

Structure and Electrical Properties of InAs/GaInSb Superlattice Film

Surface and Interface Properties of InSb Epitaxial Thin Films Grown on Gaas by Low Pressure Metalorganic Chemical Vapor Deposition

Molecular Beam Epitaxy Growth of Gaas on an Offcut Ge Substrate

Epitaxial growth of high-quality GaAs on Si(001) using ultrathin buffer layers

Strain Relaxation of the In0.53ga0.47as Epi-Layer Grown on A Si Substrate Using Molecular Beam Epitaxy