Abstract:Serials InAsxSb1−x samples grown on GaAs (001) substrates by solid source molecular beam epitaxy (MBE) have been investigated. The high-resolution X-ray diffraction (HRXRD) and atomic force microscope (AFM) results reveal that the quality and the surface morphology of InAsxSb1−x strongly depend on the III/V ratio, growth temperature and the thickness of nucleation layer. When growth temperature is 400°C, In:As:Sb is about 1:0.4:2, and the thickness of the nucleation layer is 30nm, the sample has the smallest FWHM (797 arcsec), much better than the recent results [S. Nakamura, P. Jayavel, T. Kyama, Y. Hayakawa, J. Crystal Growth 300 (2007) 497; F. Gao, N. Chen, L. Liu, X.W. Zhang, J. Wu, Z. Yin, J. Crystal Growth 304 (2007) 472]. These results demonstrate that much better samples can be obtained by MBE. AFM surface particle analysis results show that surface morphology strongly associates with the surface particle size. Small particle size makes surface smooth and large particle size makes surface rough. Through optimizing the growth conditions, our samples have better crystal quality and smoother surface morphology. The sample which has the best crystal quality shows that the carrier mobility and density is 1.3×104cm2/Vs and 1.3×1017cm3 at room temperature.

Growth And Characterization Of Gaxin1-Xas1-Ysby Epitaxial Layers Grown By Lp-Mocvd

InxGa1-xSb/GaAs quantum well structures grown by molecular beam epitaxy

Growth and Characterisation of InAsSb Ternary Layers on (100) GaSb Substrates by LP-MOCVD

Growth and characterization of InAs-rich GaInAsSb alloys on GaSb substrates by MOCVD

Growth of GaSb-rich and InAs-rich GaInAsSb alloys on GaSb substrates by MOCVD

The study of InAsxSb1-x on GaSb substrate grown by LP-MOCVD

Growth and Characterisation of InAsSb Ternary Layers on (101) GaSb Substrates by LP-MOCVD

Growth and Characterization of InAs 1-X Sb X with Different Sb Compositions on GaAs Substrates

Isotropic Growth Islands of Ga 0.16 in 0.84 As 0.80 Sb 0.20 Epilayer Grown by Metalorganic Chemical Vapour Deposition

Growth of B X Ga 1-X As, B X Al 1-X As and B X Ga 1-X-y in Y As Epilayers on (001)gaas by LP-MOCVD

Growth of GaInAsSb alloys by metalorganic chemical vapor deposition

Growth of BxGa1-xAs, BxAl1-xAs and BxGa1-x-yInyAs epilayers on (001)GaAs by low pressure metalorganic chemical vapor deposition

The growth parameter influence on the crystal quality of InAsSb grown on GaAs by molecular beam epitaxy

Characterization of InAs/GaSb Superlattices Grown by MOCVD with Atomic Resolution

Growth and Characterization of InAsSb Alloys by Metalorganic Chemical Vapour Deposition

Growth of BxGa1−xAs, BxAl1−xAs and BxGa1−x−yInyAs epilayers on (0 0 1)GaAs by low pressure metalorganic chemical vapor deposition

Characterization at atomic scale of epitaxially grown In 0.1Ga 0.86As/GaAs(4×3) surface

LPE Growth and Optical Characteristics of GaAs1−xSbx Epilayer

Growth of Gaasp by Solid Source Molecular Beam Epitaxy

Homoepitaxial and Characterization of GaSb Thin Films by Molecular Beam Epitaxy

Surface Chemistry and Growth Mechanisms Studies of Homo Epitaxial (100) Gaas by Laser Molecular Beam Epitaxy