Abstract:The In 0 5 (Ga 1- x Al x ) 0 5 P quaternary alloys has been an interesting material,because of high recombination probability,high emission efficiency, direct band gap transition and small lattice mismatch to GaAs substrate.Thus In 0 5 (Ga 1- x Al x ) 0 5 P alloys was ideal active and cladding layer material for LEDs and LDs operating in the red to green region of the visible spectrum. However,many problems plague the MOCVD growth of In 0 5 (Ga 1- x Al x ) 0 5 P,including oxygen and carbon contamination,due to the Al,the difficulties increases as the band gap energy increases. The In 0 5 (Ga 1- x Al x ) 0 5 P materials were grown on the silicon doped GaAs substrate by LP MOCVD.The metalorganic precursors were trimethylindium(TMIn),trimethylgallium(TMGa),trimethyaluminum(TMAl).The hydride source was phosphine(PH\-3).The dopant source was silane(SiH\-4) and dimethylzinc(DEZn),respectively.Al composition in In 0 5 (Ga 1- x Al x ) 0 5 P epilayer was x =0 6. To investigate the effect of the growth conditions such as temperature,dopant flow rate,Ⅴ/Ⅲ ratio,Al composion and substrate orientations on doped concentration,the growth of doped InGaAlP alloys was studied by LP MOCVD.We demonstrated that lowering temperature and reducing Al composion,increasing the flow rate of DEZn,and selecting the substrate inclining 6 to 15° from 100 to 111 are contribute to the increasing of Zn doped concentration in InGaAlP alloys. While raising temperature and increasing the flow rate of SiH\-4,reducing Al composion and Ⅴ/Ⅲ ratio are contribute to Si doped concentration,and the orientations of substrate has no effect on the latter.

Growth of B X Ga 1-X As, B X Al 1-X As and B X Ga 1-X-y in Y As Epilayers on (001)gaas by LP-MOCVD

InxGa1-xSb/GaAs quantum well structures grown by molecular beam epitaxy

Effect of Boron on the Surface and Optical Properties for (b)inas/gaas Self-Assembled Quantum Dots Grown by MOCVD

quantum well structures grown by molecular beam epitaxy

Properties of AlxGa1−xAs grown from a mixed Ga–Bi melt

First-principles Calculations of Band-Gap Properties of Zinc-Blende B X Ga 1-X N and B X Ga 1-X N Y As 1-Y Alloys

Epitaxiall Growth of Cubic and Hexagonal Gan Films on Gaas(001) Substrates by Mbe

Mbe Growth of Gaas/Algaas(Alas) Quantum-Well and Superlattice Structures

Effect of steady illumination on the binding of carbon monoxide by carboxymethylated cytochrome c.

Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility

Growth Temperature Effect on the Optical and Material Properties of AlxInyGa1−x−yN Epilayers Grown by MOCVD

Growth Properties of DopedIn_(0.5)(Ga_(1-x)Al_x)_(0.5)P Alloys

Inp and Ingaasp Materials Grown by Solid-Source Molecular Beam Epitaxy

Optical Characterization of InAs Monolayer Quantum Structures Grown on (311)A, (311)B, and (100) GaAs Substrates

Liquid Phase Epitaxy Growth and Photoluminescence of InAs1−x−ySbxPy Epilayer

Mocvd Growth and Characterization of Epitaxial Alxga1-Xn Films

Molecular beam epitaxy of single-crystalline bixbyite (In$_{1-x}$Ga$_x$)$_2$O$_3$ films ($x \leq 0.18$): Structural properties and consequences of compositional inhomogeneity

Influence of Growth Temperatures on the Quality of InGaAs/GaAs Quantum Well Structure Grown on Ge Substrate by Molecular Beam Epitaxy

Investigation of the Epitaxial Growth of InxGa1−xAs on GaAs(001) and Extension of Two-Dimensional–three-dimensional Growth Mode Transition

Assessment of Optical and Phonon Characteristics in MOCVD-Grown (AlxGa1-x)0.5In0.5P/n+-GaAs Epifilms

Al Incorporation, Structural and Optical Properties of AlxGa1−xN (0.13⩽x⩽0.8) Alloys Grown by MOCVD