Abstract:Tertiarybutylarsine (TBAs) and tertiarybutylphosphine (TBP) are getting more and more established as group V precursors for the growth of V/III semiconductors by metal organic vapor phase epitaxy (MOVPE). Due to this development, the thermal decomposition of these precursors was studied during the growth of GaAs and GaP utilizing the Ga precursors, trimethylgallium (TMGa), triethylgallium (TEGa), and tritertiarybutylgallium (TTBGa), in a horizontal AIXTRON AIX 200 GFR MOVPE system. The decomposition and reaction products were measured in line with a real-time Fourier transform quadrupole ion trap mass spectrometer from Carl Zeiss SMT GmbH. The decomposition temperatures and the related activation energies were determined for all the mentioned precursors under comparable reactor conditions. The decomposition curves suggest, on the one hand, a catalytic effect of the GaAs surface on the decomposition of TBAs. On the other hand, the decomposition products indicate alkyl exchange as a relevant step during the bimolecular decomposition of TBAs and TBP with the Ga precursors TMGa, TEGa, and TTBGa. The catalytic reaction reduces the decomposition temperature of TBAs and TBP by up to 200 °C. In addition, for the growth of GaAs with TBAs and TEGa and for the growth of GaP with TBP and TEGa, a significant decrease of the decomposition temperature with an increasing V/III ratio is observed. This behavior, which is related to an alkyl exchange reaction, gives insights into the low-temperature growth of GaAs and GaP and is converted into an effective V/III ratio. Finally, the growth of GaAs with TTBGa and TBAs is realized at 300 °C below the unimolecular decomposition temperature of TBAs, underlining the catalytic effect of the GaAs surface. Altering the growth surface with trimethylbismuth led to the prevention of the catalytic effect.

Density Functional Theory Study of the Gas Phase and Surface Reaction Kinetics for the MOVPE Growth of GaAs1- yBi y

Electronic properties of Bi-doped GaAs(001) semiconductors.

Metalorganic vapor phase epitaxy growth and characterization of quaternary (Ga,In)(As,Bi) on GaAs substrates

Surface effects of vapour-liquid-solid driven Bi surface droplets formed during molecular-beam-epitaxy of GaAsBi

Revealing the Significance of Catalytic and Alkyl Exchange Reactions during GaAs and GaP Growth by Metal Organic Vapor Phase Epitaxy

First-principles studies of kinetics in epitaxial growth of III-V semiconductors

Epitaxial phases of high Bi content GaSbBi alloys

Growth of Gasb and Gaassb in the Single-Phase Region by Movpe

Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility

Properties of AlxGa1−xAs grown from a mixed Ga–Bi melt

Growth of (SmxGa1−x)2O3 by molecular beam epitaxy

Effect of Antimony Ambience on the Interfacial Misfit Dislocations Array in A Gasb Epilayer Grown on A Gaas Substrate by Mocvd

Bi2Se3 Growth on (001) GaAs Substrates for Terahertz Integrated Systems

Thermodynamic Analysis of Group-III-Nitride Alloying with Yttrium by Hybrid Chemical Vapor Deposition

Thermodynamic and kinetic study of transport and reaction phenomena in gallium nitride epitaxy growth

General aspects of the vapor growth of semiconductor crystals - a study based on DFT simulations of the NH3/NH2 covered GaN(0001) surface in hydrogen ambient

Electronic properties of metamorphic GaSbBi films on GaAs

Systematic Investigation of the Growth Kinetics of Β -Ga2o3 Epilayer by Plasma Enhanced Chemical Vapor Deposition

Coherent Heteroepitaxy of Bi2Se3 on GaAs (111)B

Surface and Interface Properties of InSb Epitaxial Thin Films Grown on Gaas by Low Pressure Metalorganic Chemical Vapor Deposition

MOCVD growth and band offsets of \k{appa}-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates