First-principles studies of kinetics in epitaxial growth of III-V semiconductors

P. Kratzer,E. Penev,M. Scheffler

DOI: https://doi.org/10.1007/s003390101057

2002-02-18

Abstract:We demonstrate how first-principles calculations using density-functional theory (DFT) can be applied to gain insight into the molecular processes that rule the physics of materials processing. Specifically, we study the molecular beam epitaxy (MBE) of arsenic compound semiconductors. For homoepitaxy of GaAs on GaAs(001), a growth model is presented that builds on results of DFT calculations for molecular processes on the beta2-reconstructed GaAs(001) surface, including adsorption, desorption, surface diffusion and nucleation. Kinetic Monte Carlo simulations on the basis of the calculated energetics enable us to model MBE growth of GaAs from beams of Ga and As_2 in atomistic detail. The simulations show that island nucleation is controlled by the reaction of As_2 molecules with Ga adatoms on the surface. The analysis reveals that the scaling laws of standard nucleation theory for the island density as a function of growth temperature are not applicable to GaAs epitaxy. We also discuss heteroepitaxy of InAs on GaAs(001), and report first-principles DFT calculations for In diffusion on the strained GaAs substrate. In particular we address the effect of heteroepitaxial strain on the growth kinetics of coherently strained InAs islands. The strain field around an island is found to cause a slowing-down of material transport from the substrate towards the island and thus helps to achieve more homogeneous island sizes.

Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the understanding and modeling of the atomic - level kinetic processes involved in the growth of III - V semiconductor materials (especially gallium arsenide, GaAs) by molecular beam epitaxy (MBE). Specifically, the authors use first - principles calculations based on density functional theory (DFT) to study various microscopic processes during homoepitaxy and heteroepitaxy on the GaAs(001) surface, such as adsorption, desorption, surface diffusion, and nucleation, etc., and explore the influence of these processes on the growth morphology through Monte Carlo simulations (kMC) based on these calculation results.

To understand these problems more in - depth, the authors pay special attention to the following aspects:

1. **Homoepitaxial growth model**: For the homoepitaxy of GaAs on GaAs(001), the author proposes a growth model based on the β2 - reconstructed surface. This model takes into account the behavior of Ga and As₂ molecules on the surface, including their adsorption, desorption, diffusion, and interactions with other species on the surface.

2. **Kinetic mechanism of island - like growth**: Through kMC simulations, the authors find that island - like growth is mainly controlled by the reaction between As₂ molecules and Ga adatoms. In addition, they also point out that the traditional nucleation theory is not applicable to the prediction of island density in GaAs epitaxial growth.

3. **Influence of heteroepitaxy**: The paper discusses the heteroepitaxy of InAs on GaAs(001), especially the influence of strain on the epitaxial growth kinetics. The research shows that due to the effect of the strain field, the transfer speed of materials from the substrate to the islands slows down, which helps to obtain more uniform island sizes.

4. **Importance of microscopic processes**: Emphasizes the importance of understanding and controlling these microscopic processes for achieving high - quality semiconductor thin - film growth, and shows how to combine experimental observations and theoretical simulations to reveal complex growth mechanisms.

In summary, this paper aims to provide new insights and technical means for understanding and ultimately controlling the epitaxial growth of III - V semiconductor materials by combining first - principles calculations and kMC simulations. This is of great significance for the development of high - performance electronic devices.