Growth Properties of DopedIn_(0.5)(Ga_(1-x)Al_x)_(0.5)P Alloys

Zhong Li

2002-01-01

Chinese Journal of Luminescence

Abstract:The In 0 5 (Ga 1- x Al x ) 0 5 P quaternary alloys has been an interesting material,because of high recombination probability,high emission efficiency, direct band gap transition and small lattice mismatch to GaAs substrate.Thus In 0 5 (Ga 1- x Al x ) 0 5 P alloys was ideal active and cladding layer material for LEDs and LDs operating in the red to green region of the visible spectrum. However,many problems plague the MOCVD growth of In 0 5 (Ga 1- x Al x ) 0 5 P,including oxygen and carbon contamination,due to the Al,the difficulties increases as the band gap energy increases. The In 0 5 (Ga 1- x Al x ) 0 5 P materials were grown on the silicon doped GaAs substrate by LP MOCVD.The metalorganic precursors were trimethylindium(TMIn),trimethylgallium(TMGa),trimethyaluminum(TMAl).The hydride source was phosphine(PH\-3).The dopant source was silane(SiH\-4) and dimethylzinc(DEZn),respectively.Al composition in In 0 5 (Ga 1- x Al x ) 0 5 P epilayer was x =0 6. To investigate the effect of the growth conditions such as temperature,dopant flow rate,Ⅴ/Ⅲ ratio,Al composion and substrate orientations on doped concentration,the growth of doped InGaAlP alloys was studied by LP MOCVD.We demonstrated that lowering temperature and reducing Al composion,increasing the flow rate of DEZn,and selecting the substrate inclining 6 to 15° from 100 to 111 are contribute to the increasing of Zn doped concentration in InGaAlP alloys. While raising temperature and increasing the flow rate of SiH\-4,reducing Al composion and Ⅴ/Ⅲ ratio are contribute to Si doped concentration,and the orientations of substrate has no effect on the latter.