Abstract:The In 0 5 (Ga 1- x Al x ) 0 5 P quaternary alloys has been an interesting material,because of high recombination probability,high emission efficiency, direct band gap transition and small lattice mismatch to GaAs substrate.Thus In 0 5 (Ga 1- x Al x ) 0 5 P alloys was ideal active and cladding layer material for LEDs and LDs operating in the red to green region of the visible spectrum. However,many problems plague the MOCVD growth of In 0 5 (Ga 1- x Al x ) 0 5 P,including oxygen and carbon contamination,due to the Al,the difficulties increases as the band gap energy increases. The In 0 5 (Ga 1- x Al x ) 0 5 P materials were grown on the silicon doped GaAs substrate by LP MOCVD.The metalorganic precursors were trimethylindium(TMIn),trimethylgallium(TMGa),trimethyaluminum(TMAl).The hydride source was phosphine(PH\-3).The dopant source was silane(SiH\-4) and dimethylzinc(DEZn),respectively.Al composition in In 0 5 (Ga 1- x Al x ) 0 5 P epilayer was x =0 6. To investigate the effect of the growth conditions such as temperature,dopant flow rate,Ⅴ/Ⅲ ratio,Al composion and substrate orientations on doped concentration,the growth of doped InGaAlP alloys was studied by LP MOCVD.We demonstrated that lowering temperature and reducing Al composion,increasing the flow rate of DEZn,and selecting the substrate inclining 6 to 15° from 100 to 111 are contribute to the increasing of Zn doped concentration in InGaAlP alloys. While raising temperature and increasing the flow rate of SiH\-4,reducing Al composion and Ⅴ/Ⅲ ratio are contribute to Si doped concentration,and the orientations of substrate has no effect on the latter.

Influence of Indium Doping on Acceptor Activation Energy in P-Type Al_xGa_(1-x)N

Effect Of Indium Ambient On Electrical Properties Of Mg-Doped Alxga1-Xn

The Influence of Indium Surfactant on the Electrical Properties of GaN Epilayers Grown by Metal-Organic Chemical Vapour Deposition

Growth Properties of DopedIn_(0.5)(Ga_(1-x)Al_x)_(0.5)P Alloys

Effects of Indium Surfactant on the Crystalline and Optical Properties of GaN During Initial Growth Stage

Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping

Effect of Al Doping in the InGaN/GaN Multiple Quantum Well Light Emitting Diodes Grown by Metalorganic Chemical Vapour Deposition

Material Properties of Mocvd Grown Algan Layers Influenced by Indium-Incorporation

Silicon Doping Dependence of n-Type Al0.5Ga0.5 N Layers Grown by Metalorganic Chemical Vapor Deposition.

Improvement of P-Type Conductivity in Al-rich AlGaN Substituted by MgGa Δ-Doping (aln)m/(gan)n (m≥n) Superlattice

Systematic Study on P-Type Doping Control of Inn with Different Mg Concentrations in Both in and N Polarities

Ni Diffusion and Its Influence on Electrical Properties of AlxGa1−xN∕GaN Heterostructures

Investigation Of Mg Doping In High-Al Content P-Type Alxga1-Xn (0.3 < X < 0.5)

Influence of High Mg Doping on the Microstructural and Opto-Electrical Properties of AlGaN Alloys

Significant Conductivity Enhancement in Al-rich N-Algan by Modulation Doping

Effect of Indium Doping on the Growth and Physical Properties of Ultrathin Nanosheets of Gainn/Zno Solid Solution

Improvement of Doping Efficiency in Mg-Al0.14Ga0.86N/GaN Superlattices with AlN Interlayer by Suppressing Donor-Like Defects

Optical and Electrical Properties of AlxGa1−xN/GaN Epilayers Modulated by Aluminum Content

Crystalline Quality of InxAl1-xN with Different Indium Contents Around Lattice-Matched to GaN

Significantly suppressed thermal transport by doping In and Al atoms in Gallium Nitride

Growth and Properties of Mg-doped In-polar InN Films