Abstract:The photoluminescence (PL) and photoluminescence excitation spectra (PLE) of selected InxGa1-xN samples grown by metal organic chemical vapor deposition (MOCVD) have been investigated, and the analysis of structural and optical behaviors has been taken to study the existence of the microstructure InGaN alloys on the basis of X-ray diffraction (XRD) and atomic force microscopy (AFM) measurements.XRD reveals that the sample is a single crystalline InxGa1-xN film formed predominantly in (0002) direction, the In mole composition x in InxGa1-xN film is calculated to be about 0.2 according to the Bragg's angle of InxGa1-xN (0002). The AFM plane-view and 3D images of the selected In0.2Ga0.8N sample show almost uniform island-like microstructure appearing to be composed of granular-crystalline in nanometer scale. The islands composed of the grapes-like have an average height of 10 nm at most and a mean size of 300 nm. The self-organized microstructure appeared to form cone and/or pyramid shape and tended to agglomerate island-like surface with RMS roughness about 10 nm, which attributed to Stranski-Krastanov growth mechanism. The comparison between PLE and PL under different exciting or monitoring energy allows determining the existence of wetting layer (WL)in the sample. The PLE and PL measurements show that the resonant absorption is related to the band gap and wetting layer of the alloy at different exciting and monitoring energy. It has been found that PLE peaks of the In0.2Ga0.8N alloy are dominated by 365 nm and 474 nm with monitoring wavelength 545 nm and 493 nm; the broad 545 nm and narrow 493 nm emission peaks are originated from In(Ga)N wetting layer and InGaN region respectively. The structural and optical analyses suggest that the origin of the exciton localization center is the self-formed islands. Hence, the irrelevancy of the PL spectra to the gap energy was explained in terms of fluctuation resulting from variations in grain size or shape. This type of localized center provides another physical model for the proposed localized states in InxGa1-xN epilayers. Further characterization of the InGaN systems is underway to help fully understand the correlation between the structural and the optical pro-perties of self-organized micro-structure of InGaN system.

Growth of In‐rich and Ga‐rich InGaN Alloys by MOCVD and Fabrication of InGaN‐based Photoelectrodes

Probing the Homogeneity of an In-rich InGaN Layer by Nanoscale Cathodoluminescence (conference Presentation)

Study of InGaN Films Grown by MOCVD

Investigation on Optical and Micro-structural Properties of Inx Ga1-x N Alloys Grown by MOCVD

Material Properties of Mocvd Grown Algan Layers Influenced by Indium-Incorporation

Al Incorporation, Structural and Optical Properties of AlxGa1−xN (0.13⩽x⩽0.8) Alloys Grown by MOCVD

Photoemission study and band alignment of GaN passivation layers on GaInP heterointerface

MBE Growth of Entire-Indium-composition-tunable InxGa1-xN Alloy

Transition Energies and Bowing Parameters for In-rich InGaN and InAlN Alloys

Investigation of InGaN Layer Grown under In-Rich Condition by Reflectance Difference Spectroscopy Microscope

High-pressure MOCVD Growth of InGaN Thick Films Toward the Photovoltaic Applications.

Structural and Optical Properties of Al 1-X in X N Epilayers on GaN Template Grown by Metalorganic Chemical Vapor Deposition

Investigation of High Indium-Composition InGaN/GaN Heterostructures on ZnO Grown by Metallic Organic Chemical Vapor Deposition

Correlations among Morphology, Composition, and Photoelectrochemical Water Splitting Properties of InGaN Nanorods Grown by Molecular Beam Epitaxy

Growth Properties of DopedIn_(0.5)(Ga_(1-x)Al_x)_(0.5)P Alloys

Optical Properties and Electronic Structure of Inn and In-Rich Group Iii-Nitride Alloys

Group III-nitride Alloys As Photovoltaic Materials

Structural and Optical Properties of Nonpolar m-Plane GaN and GaN-Based LEDs on ?-LiAlO2

Optical, Structural, and Nuclear Scientific Studies of AlGaN with High Al Composition

Optical and Electronic Properties of InGaN Thin Film Layers

Near-Infrared InGaN Alloys Grown on High-In-Composition InGaN Buffer Layer