Abstract:III-V semiconductor-based photoelectrochemical (PEC) devices show the highest solar-to-electricity or solar-to-fuel conversion efficiencies. GaInP is a relevant top photoabsorber layer or a charge-selective contact in PEC for integrated and direct solar fuel production, due to its tunable lattice constant, electronic band structure, and favorable optical properties. To enhance the stability of its surface against chemical corrosion which leads to decomposition, we deposit a GaN protection and passivation layer. The n-doped GaInP(100) epitaxial layers were grown by metalorganic chemical vapor deposition on top of GaAs(100) substrate. Subsequently, thin 1-20 nm GaN films were grown on top of the oxidized GaInP surfaces by atomic layer deposition. We studied the band alignment of these multi-junction heterostructures by X-ray and ultraviolet photoelectron spectroscopy. Due to the limited emission depth of photoelectrons, we determined the band alignment by a series of separate measurements in which we either modified the GaInP(100) surface termination or the film thickness of the grown GaN on GaInP(100) buffer layers. On n-GaInP(100) surfaces prepared with the well-known phosphorus-rich (2x2)/c(4x2) reconstruction we found up-ward surface band bending (BB) of 0.34 eV, and Fermi level pinning due to the present surface states. Upon oxidation, the surface states are partially passivated resulting in a reduction of BB to 0.12 eV and a valence band offset (VBO) between GaInP and oxide bands of 2.0 eV. Between the GaInP(100) buffer layer and the GaN passivation layer, we identified a VBO of 1.8 eV. The corresponding conduction band offset of -0.2 eV is found to be rather small. Therefore, we evaluate the application of the GaN passivation layer as a promising technological step not only to reduce surface states but also to increase the stability of the surfaces of photoelectrochemical devices.

High-pressure MOCVD Growth of InGaN Thick Films Toward the Photovoltaic Applications.

Growth of In‐rich and Ga‐rich InGaN Alloys by MOCVD and Fabrication of InGaN‐based Photoelectrodes

Toward high efficiency at high temperatures: Recent progress and prospects on InGaN-Based solar cells

Study of Photoluminescence and Absorption in Phase-Separation InGaN Films

Multicomponent Oxynitride Thin Films: Precise Growth Control and Excited State Dynamics

Study of InGaN Films Grown by MOCVD

MOCVD growth of thick V-pit-free InGaN films on semi-relaxed InGaN substrates

Enhancement of the Conversion Efficiency of GaN-based Photovoltaic Devices with AlGaN/InGaN Absorption Layers

Photovoltaic effects in InGaN structures with p–n junctions

Material Properties of Mocvd Grown Algan Layers Influenced by Indium-Incorporation

Full-composition-graded InxGa1−xN Films Grown by Molecular Beam Epitaxy

Growth of High Quality N-Al0.5ga0.5n Thick Films by Mocvd

Growth of III-Nitride Materials and Blue Light-Emitting Diodes by Metal Organic Vapor Phase Epitaxy

Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application

Growth and doping characteristics of InGaN films grown by low pressure MOCVD

Silicon and Zinc Co-Doped InGaN Films with High Luminuous Efficiency Grown by LP-MOVCD at High Growth Temperature

Study of Growth Parameters on the Well-Oriented InxAl1-xN Using Sputtering on Si (100) Substrate

Group III-nitride Alloys As Photovoltaic Materials

Photoemission study and band alignment of GaN passivation layers on GaInP heterointerface

The Growth of High-Quality and Self-Separation GaN Thick-Films by Hydride Vapor Phase Epitaxy

Homo-epitaxial Growth of High Crystal Quality GaN Thin Films by Plasma Assisted–molecular Beam Epitaxy