Abstract:Color-mixed (cm) light-emitting diodes (LEDs) are theoretically the most efficient white light emitters, projected to improve white light luminous efficacy by 34% compared to incumbent phosphor converted LEDs. Since white light technology is globally pervasive and essential, small improvements in LED technology can result in energy savings. However, cm-LEDs are not yet realized due to poor efficacy in green and amber emitting materials, a spectral region colloquially referred to as the green gap. ZnGeN2 is nearly isostructural and closely lattice-matched to GaN and can be heteroepitaxially integrated with existing GaN devices; ZnGeN2/GaN hybrid structures are theorized to emit green (∼530 nn) light with a spontaneous emission rate 4.6-4.9 times higher than traditional InGaN LEDs when incorporated into III-N LED structures. In this report we demonstrate the molecular beam epitaxy (MBE) growth of GaN and ZnGeN2 superlattices, an important step towards realizing multiple quantum well structures required for efficient LEDs. Elemental analysis, including atom probe tomography, shows that Ga and Ge are observed in both ZnGeN2 and GaN layers, degrading the structural uniformity. The lack of elemental abruptness also leads to increased defect luminescence and reabsorption of band edge luminescence. The source of unintentional Ga distributed throughout the ZnGeN2 layers was identified as excess flux escaping from around the closed MBE shutter. The source of unintentional Ge, which tended to incorporate as a single delta-doped layer in GaN, was identified as Ge riding along the cyclical metal-rich Ga adlayer used for high quality GaN, incorporating during subsequent nitrogen-rich growth step. Modifying the growth strategy results in improved structural quality, elemental abruptness, and luminescence response. This realization of structurally and elementally abrupt interfaces demonstrates the potential of heteroepitaxially integrated binary and ternary nitrides for energy-relevant devices.

Silicon and Zinc Co-Doped InGaN Films with High Luminuous Efficiency Grown by LP-MOVCD at High Growth Temperature

Growth and doping characteristics of InGaN films grown by low pressure MOCVD

Study on Growth and Luminescence Properties of the Blue LED InGaN Active Layer

InGaN/GaN MQW High Brightness LED Grown by MOCVD

Structural Characterization and Photoluminescent Properties of Zn1-Xmgxo Films on Silicon

Structural Characterization and Photoluminescent Properties of Zn 1- X Mg X O Films on Silicon

Enhancement of the Emission Efficiency of InGaN Films by Suppressing the Incorporation of Unintentional Gallium Atoms

Fabrication and Characterization of High Quality N-Zno/p-gan Heterojunction Light Emission Diodes

Mocvd Growth and Properties of Zno Films Using Dimethylzinc and Oxygen

Growth of GaN single crystal film on ZnO/Al2O3 substrate and its characteristics

Saturated Blue-Violet Electroluminescence From Single Zno Micro/Nanowire And P-Gan Film Hybrid Light-Emitting Diodes

Investigation of High Indium-Composition InGaN/GaN Heterostructures on ZnO Grown by Metallic Organic Chemical Vapor Deposition

Improving luminescence response in ZnGeN2/GaN superlattices: defect reduction through composition control

Ingan/Gan Blue Light Emitting Diodes Grown on Si(110) and Si(111) Substrates

Growth of III-Nitride Materials and Blue Light-Emitting Diodes by Metal Organic Vapor Phase Epitaxy

Optical and Electronic Properties of InGaN/GaN Multi-Quantum-Wells Near-Ultraviolet Lighting-Emitting-Diodes Grown by Low-Pressure Metalorganic Vapour Phase Epitaxy

Emission Efficiency Enhanced by Introduction of the Homogeneous Localization States in InGaN/GaN Multiple Quantum Well LEDs

High-pressure MOCVD Growth of InGaN Thick Films Toward the Photovoltaic Applications.

Explorations on Growth of Blue-Green-Yellow-Red InGaN Quantum Dots by Plasma-Assisted Molecular Beam Epitaxy.

Realization of InGaN Laser Diodes above 500 Nm by Growth Optimization of the InGaN/GaN Active Region

Nonpolar M-Plane Thin Film Gan and Ingan/Gan Light-Emitting Diodes on Lialo2(100) Substrates