Abstract:III-V semiconductor-based photoelectrochemical (PEC) devices show the highest solar-to-electricity or solar-to-fuel conversion efficiencies. GaInP is a relevant top photoabsorber layer or a charge-selective contact in PEC for integrated and direct solar fuel production, due to its tunable lattice constant, electronic band structure, and favorable optical properties. To enhance the stability of its surface against chemical corrosion which leads to decomposition, we deposit a GaN protection and passivation layer. The n-doped GaInP(100) epitaxial layers were grown by metalorganic chemical vapor deposition on top of GaAs(100) substrate. Subsequently, thin 1-20 nm GaN films were grown on top of the oxidized GaInP surfaces by atomic layer deposition. We studied the band alignment of these multi-junction heterostructures by X-ray and ultraviolet photoelectron spectroscopy. Due to the limited emission depth of photoelectrons, we determined the band alignment by a series of separate measurements in which we either modified the GaInP(100) surface termination or the film thickness of the grown GaN on GaInP(100) buffer layers. On n-GaInP(100) surfaces prepared with the well-known phosphorus-rich (2x2)/c(4x2) reconstruction we found up-ward surface band bending (BB) of 0.34 eV, and Fermi level pinning due to the present surface states. Upon oxidation, the surface states are partially passivated resulting in a reduction of BB to 0.12 eV and a valence band offset (VBO) between GaInP and oxide bands of 2.0 eV. Between the GaInP(100) buffer layer and the GaN passivation layer, we identified a VBO of 1.8 eV. The corresponding conduction band offset of -0.2 eV is found to be rather small. Therefore, we evaluate the application of the GaN passivation layer as a promising technological step not only to reduce surface states but also to increase the stability of the surfaces of photoelectrochemical devices.

Enhancement of the Conversion Efficiency of GaN-based Photovoltaic Devices with AlGaN/InGaN Absorption Layers

Improving the efficiency of a GaInP solar cell using an AlGaAs buffer layer by optimizing the thicknesses of the PN junction

High-efficiency InP-based Multijunction Solar Cells

Quantum Efficiency and Temperature Coefficients of Gainp/Gaas Dual-Junction Solar Cell

Fabrication of High Voltage GaAs Micro-Solar Cell Arrays

Polarization-Engineered InGaN/GaN Heterojunctions for Photovoltaic Applications

Significant Performance Improvement in AlGaN Solar-Blind Avalanche Photodiodes by Exploiting the Built-In Polarization Electric Field

Numerical simulation of highly photovoltaic efficiency of InGaN based solar cells with ZnO as window layer

Photoemission study and band alignment of GaN passivation layers on GaInP heterointerface

Study on AlGaN P-I-N-I-N solar-blind avalanche photodiodes with Al 0.45 Ga 0.55 N multiplication layer

High efficient step graded Inx Ga1−x N/GaN superlattice solar cell

Toward high efficiency at high temperatures: Recent progress and prospects on InGaN-Based solar cells

High-Gain N-Face AlGaN Solar-Blind Avalanche Photodiodes Using a Heterostructure As Separate Absorption and Multiplication Regions

Influence of Piezoelectric Fields on InGaN Based Intermediate Band Solar Cells

Improved Photovoltaic Performance of GaAs/Carbon Nanotube Heterojunction Solar Cells with a Multifunctional Nafion/PEDOT:PSS Layer

Gradient doped nickel oxide hole selective heterocontact and ultrathin passivation for silicon photovoltaics with efficiencies beyond 20%

Positive Temperature Coefficient of Photovoltaic Efficiency in Solar Cells Based on InGaN/GaN MQWs

Optical Absorption Enhancement in Freestanding GaAs Thin Film Nanopyramid Arrays

An Improved Design for AlGaN Solar-Blind Avalanche Photodiodes with Enhanced Avalanche Ionization

Optical enhancement of the open-circuit voltage in high quality GaAs solar cells

Optical Absorption Enhancement: Optical Absorption Enhancement in Freestanding GaAs Thin Film Nanopyramid Arrays (adv. Energy Mater. 10/2012)