Abstract:The In 0 5 (Ga 1- x Al x ) 0 5 P quaternary alloys has been an interesting material,because of high recombination probability,high emission efficiency, direct band gap transition and small lattice mismatch to GaAs substrate.Thus In 0 5 (Ga 1- x Al x ) 0 5 P alloys was ideal active and cladding layer material for LEDs and LDs operating in the red to green region of the visible spectrum. However,many problems plague the MOCVD growth of In 0 5 (Ga 1- x Al x ) 0 5 P,including oxygen and carbon contamination,due to the Al,the difficulties increases as the band gap energy increases. The In 0 5 (Ga 1- x Al x ) 0 5 P materials were grown on the silicon doped GaAs substrate by LP MOCVD.The metalorganic precursors were trimethylindium(TMIn),trimethylgallium(TMGa),trimethyaluminum(TMAl).The hydride source was phosphine(PH\-3).The dopant source was silane(SiH\-4) and dimethylzinc(DEZn),respectively.Al composition in In 0 5 (Ga 1- x Al x ) 0 5 P epilayer was x =0 6. To investigate the effect of the growth conditions such as temperature,dopant flow rate,Ⅴ/Ⅲ ratio,Al composion and substrate orientations on doped concentration,the growth of doped InGaAlP alloys was studied by LP MOCVD.We demonstrated that lowering temperature and reducing Al composion,increasing the flow rate of DEZn,and selecting the substrate inclining 6 to 15° from 100 to 111 are contribute to the increasing of Zn doped concentration in InGaAlP alloys. While raising temperature and increasing the flow rate of SiH\-4,reducing Al composion and Ⅴ/Ⅲ ratio are contribute to Si doped concentration,and the orientations of substrate has no effect on the latter.

Doping Characteristics of Mg in InGaAlP and GaP

Influence of High Mg Doping on the Microstructural and Opto-Electrical Properties of AlGaN Alloys

Investigation Of Mg Doping In High-Al Content P-Type Alxga1-Xn (0.3 < X < 0.5)

Optimization and Analysis of Magnesium Doping in MOCVD Grown p-GaN

MOCVD growth and annealing characteristics of Mg-doped AlGaN films

Growth Properties of DopedIn_(0.5)(Ga_(1-x)Al_x)_(0.5)P Alloys

Properties of Mg-Doped AlGaN Films

Effects of Cp 2 Mg molar flow rate on structural, optical, and electrical properties of semipolar Mg-doped p-AlGaN epi-layers

Study on Mg-doped AlGaN Films Grown by Metal Organic Chemical Vapor Deposition

Influence of Mg source flowrate on the properties of isoelectronic in-doping p-AlGaN materials

Effects of Ⅴ/Ⅲ Ratio and Cp2Mg Flow Rate on Characteristics of Non-Polar A-Plane Mg-delta-doped P-Algan Epi-Layer

Regulation of Hole Concentration and Mobility and First-Principle Analysis of Mg-Doping in InGaN Grown by MOCVD

Effects of V/III ratio and Cp2Mg flow rate on characteristics of non-polar a-plane Mg-delta-doped p-AlGaN epi-layer

Mg acceptors activation mechanism and hole transport characteristics in highly Mg-doped AlGaN alloys

Capacitively Coupled Plasma-Stimulated Room-Temperature Mg and Mn Doping and Electrical Activation in GaAs

Three-dimensional measurement of Mg dopant distribution and electrical activity in GaN by correlative atom probe tomography and off-axis electron holography

P-Type Doping Of Gan By Mg+ Implantation

Effects of Mg-doping Temperature on the Structural and Electrical Properties of Nonpolar A-Plane P-Type GaN Films

Influence of Mg doping on In adsorption and In incorporation in (In,Ga)N superlattices

Systematic Study on P-Type Doping Control of Inn with Different Mg Concentrations in Both in and N Polarities

Characteristics of 4-Inch (100) Oriented Mg-doped Β-Ga2o3 Bulk Single Crystals Grown by a Casting Method