Abstract:The ternary alloy InAsSb of the low Sb component as the buffer layer, which reduces the mismatch of the film, was grown on the GaSb (100) substrate by using the molecular beam epitaxy, and then regrown the InAs film. Real-time in situ monitoring by reflection high energy electron diffraction throughout the growth process. Following the growth of the InAs film, the electron diffraction pattern showed a clear reconstitution line, with the surface of the film having atomic flatness. Atomic Force Microscopy is used to characterize InAs films, and the results show that the roughness of epitaxial InAs film on the InAsSb buffer with lower Sb components is reduced by about 2.5 times than the roughness of epitaxial InAs film on the InAsSb buffer with higher Sb components. X-ray diffraction and simulation were performed for epitaxial InAs films on ternary alloy InAsSb buffer with different Sb composition. The results show that the full width half maximun of the diffraction peak of the epitaxial InAs film on the lower Sb composition of InAsSb buffer layer is smaller. It is indicated that the InAsSb with a low Sb component acting as a buffer layer can reduce the internal stress of the InAs film and can improve the crystal quality of the InAs film. The luminescence properties of InAs films with high crystal quality were studied by photoluminescence spectroscopy. The luminescence peak of InAs is about 0.418 eV at 10 K, which is free exciton luminescence.

The study of InAsxSb1-x on GaSb substrate grown by LP-MOCVD

Growth and Characterisation of InAsSb Ternary Layers on (100) GaSb Substrates by LP-MOCVD

Growth and Characterisation of InAsSb Ternary Layers on (101) GaSb Substrates by LP-MOCVD

InxGa1-xSb/GaAs quantum well structures grown by molecular beam epitaxy

Growth and characterization of InAs-rich GaInAsSb alloys on GaSb substrates by MOCVD

Growth And Characterization Of Gaxin1-Xas1-Ysby Epitaxial Layers Grown By Lp-Mocvd

Growth of GaSb-rich and InAs-rich GaInAsSb alloys on GaSb substrates by MOCVD

Epitaxial InAs Films on GaSb Substrate and Study on Optical Properties

Studies on Structural of Long Wavelength Infrared InAsSb Materials

Growth and Characterization of InAs 1-X Sb X with Different Sb Compositions on GaAs Substrates

Growth of GaInAsSb alloys by metalorganic chemical vapor deposition

Growth and Characterization of InAsSb Alloys by Metalorganic Chemical Vapour Deposition

Characterization of InAs/GaSb Superlattices Grown by MOCVD with Atomic Resolution

Surface and Interface Properties of InSb Epitaxial Thin Films Grown on Gaas by Low Pressure Metalorganic Chemical Vapor Deposition

Studies on Inas/Gasb Superlattice Structural Properties by High Resolution X-Ray Diffraction

LPE Growth and Optical Characteristics of GaAs1−xSbx Epilayer

Mid-wavelength infrared InAs/GaSb superlattice grown by molecular beam epitaxy

A surface and interface study on the InSb/GaAs heterostructures

Structure and Electrical Properties of InAs/GaInSb Superlattice Film

Surface and interface analysis of GaSb/GaAs semiconductor materials

The growth parameter influence on the crystal quality of InAsSb grown on GaAs by molecular beam epitaxy