Abstract:InAs1-xSbx is a unique semiconductor as it possesses the lowest bandgap (Eg) of the conventional III–V materials, yielding emission out to nearly 15 μm at room temperature. As such, it is well-suited as the absorber material in long-wavelength infrared (IR) applications such as chemical sensing and large format IR imaging. However, the compositions at the longest wavelengths are significantly lattice-mismatched to conventional substrates. Overcoming this lattice-mismatch requires using thick graded buffers, and to date, little work has focused on the effect of growth conditions on the Sb-incorporation or optical quality of the longest-wavelength InAs1-xSbx materials. Here, the authors investigate the molecular beam epitaxy (MBE) growth of this potential absorber material by using solid source MBE to grow InAs1-xSbx on step-graded buffers on GaSb substrates. The authors have achieved cap-layer compositions as high as x ≈ 0.55 under various substrate temperatures (Tsub) and V/III beam equivalent pressure ratios. By using InAs1-xSbx as the grading material as well as the cap material, the authors can measure Sb-content as a function of growth conditions over many compositions. The author's results show good agreement between x and Eg compared with previous reports, obtaining T = 8 K photoluminescence (PL) emission approaching 11 μm. However, the authors also found that Sb-incorporation falls off for x > 0.2 and worsens with increasing Tsub, suggesting that Sb-incorporation rates increase with reduced adatom mobility. Additionally, the PL of the samples show improved intensity when either Tsub or V/III were increased, while cross-sectional transmission electron microscopy revealed a significant decrease in threading dislocation density with increased V/III. Ultimately, the authors found that under the proper growth conditions, optically active InAs1-xSbx with x over 0.55 can be attained, and with an optimized grading structure, could be a low-cost alternative to HgCdTe for long-wavelength infrared optoelectronics.

Growth and Characterization of InAsSb Alloys by Metalorganic Chemical Vapour Deposition

InxGa1-xSb/GaAs quantum well structures grown by molecular beam epitaxy

Surface and Interface Properties of InSb Epitaxial Thin Films Grown on Gaas by Low Pressure Metalorganic Chemical Vapor Deposition

Suppression of threading defects formation during Sb-assisted metamorphic buffer growth in InAs/InGaAs/InP structure

Thin InSb Films on GaAs Substrates by Molecular Beam Epitaxy

GSMBE growth and characterizations of AlInP/InGaAsP strain-compensated multiple-layer heterostructures

Effect of Growth Condition on Electrical-Properties of Mbe and Mocvd-Alinas

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

The Effect of Growth Temperature on InAs Quantum Dots Grown by MOCVD

Initial stage of InSb heteroepitaxial growth on GaAs (111)A: effect of thin InAs interlayers

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

A surface and interface study on the InSb/GaAs heterostructures

Sb-incorporation in MBE-grown metamorphic InAsSb for long-wavelength infrared applications

Study on Epitaxial Growth of High‐Quality InSb Materials

Optical Characterization of InAs Monolayer Quantum Structures Grown on (311)A, (311)B, and (100) GaAs Substrates

Growth of InxGa1−xAs Films on GaAs (100): Inserting an Ultrathin InxGa1−xAs Buffer Using a Surface Technology

MBE Growth of Mid-Wavelength Infrared Photodetectors Based on High Quality InAs/AlAs/InAsSb Superlattice

Morphology of Mbe Grown Inas Films Studied by Atomic Force Microscope

Interband Transitions of InAs/AlAs Short-Period Superlattices Grown by Molecular Beam Epitaxy

Epitaxial Growth of Lattice-Matched InSb/CdTe Heterostructures on the GaAs(111) Substrate by Molecular Beam Epitaxy

Growth dynamics and compositional structure in periodic InAsSb nanowire arrays on Si (111) grown by selective area molecular beam epitaxy