Abstract:There has been sustained interesting in the area of band-gap III-V compound semiconductors for 3~5 μm infrared device applications.InSb is an attractive material because of its potential use for large area detector arrays,high frequency devices and magnetoresistive sonsors for position sensing.Unfortunately,InSb itself cannot be used as a substrate due to its very large parallel conduction.Semi-insulating GaAs has been widely employed as the substrate for InSb growth,because of its electrical isolation,low-cost and mechanical strength.The main obstacle to acquiring high quality InSb comes from the large lattice mismatch of 14.6%,between InSb and GaAs,which is particularly detrimental to thin films.In the experiments,obtaining high quality InSb by two-step growth process had been reported in the high mismatch systems.In this study,all the InSb epitaxial thin films were grown on SI-GaAs by VG solid source MBE.Reflection high-energy electron diffraction(RHEED) was used for in-situ monitoring InSb surface morphology,the effect of the buffer on quality of heteroepitaxial InSb films was systematically studied.Including a serious of samples,a GaAs buffer was not required,as it shows no apparent improvement for the quality of InSb.Optimized of the low-temperature(LT) layer was performed at maintaining binary growth,which in the cases was 350 ℃,and the folllowing high-temperature(HT) growth at 450 ℃.The epitaxial thin films characterization was presented and analyzed,including surface morphology,interface inspection and crystalline quality by atomic force microscopy(AFM),transmission electron microscopy(TEM) and X-ray diffraction(XRD) etc.We also described the problem between the different thickness InSb epilayer and Hall-mobility.In conclusion,high quality InSb epilayers strongly depends on LT InSb buffer layer.The InSb films were grown directly onto semi-insulating GaAs substrate,for our typical InSb samples with optimized buffer layer,room temperature DCXRD FWHM of 172″ and mobility of 64 300 cm2·V-1·s-1 at 77 K,were obtained.

Growth of InxGa1−xAs Films on GaAs (100): Inserting an Ultrathin InxGa1−xAs Buffer Using a Surface Technology

Design of InxGa1−xAs Buffer Layers for Epitaxial Growth of High-Quality In0.3Ga0.7As Films on GaAs Substrates

Quality-enhanced In0.3Ga0.7As Film Grown on GaAs Substrate with an Ultrathin Amorphous In0.6Ga0.4As Buffer Layer

In0.25Ga0.75As growth on low-temperature thin buffer layers formed on GaAs (001) substrate

In0.25Ga0.75As growth on low-temperature thin buffer layers formed on GaAs (0 0 1) substrate

The Effect of Buffer Types on the In 0.82 Ga 0.18 As Epitaxial Layer Grown on an InP (100) Substrate.

Structural Properties of In0.53Ga0.47As Epitaxial Films Grown on Si (111) Substrates by Molecular Beam Epitaxy

Epitaxial growth of high-quality GaAs on Si(001) using ultrathin buffer layers

Effects of In0.82Ga0.18As/InP Double Buffers Design on the Microstructure of the In0.82G0.18As/InP Heterostructure

Effects of In 0 . 82 Ga 0 . 18 As / InP Double Buffers Design on the Microstructure of the In 0 . 82 G 0 . 18 As / InP Heterostructure

Buffer Optimization for High-Quality InP-on-GaAs(001) Quasi-Substrates

Epitaxial InAs Films on GaSb Substrate and Study on Optical Properties

Studying Of Linearly Graded Buffer Layer Effect On Quality Of Ingaas On Gaas Substrate

Effect of InxGa1 − Xas Interlayer on the Properties of In0.3Ga0.7As Epitaxial Films Grown on Si (111) Substrates by Molecular Beam Epitaxy

Growth of High-Quality InP-on-GaAs Quasi-Substrates Using Double Low-Temperature Buffers and Strained Layer Surperlattices by MOCVD

Formation of Thin GaAs Buffer Layers on Silicon for Light-Emitting Devices

Study of the Graded Buffer Layer Effect on GaInAs by X-Ray Diffractometer

Heteroepitaxial Growth of InP/GaAs Using Low-Temperature InxGa1-xP Graded Buffers

Suppression of threading defects formation during Sb-assisted metamorphic buffer growth in InAs/InGaAs/InP structure

Studying of Buffer Effect on Quality of InSb on GaAs Substrate

Effect of Ingaas Interlayer on the Properties of Gaas Grown on Si (111) Substrate by Molecular Beam Epitaxy