An XPS study of Mn thin films grown on GaAs(001) surface

Min Xu,Xingguo Zhu,Ming Zhang,Guosheng Dong,Xiaofeng Jin
1996-01-01
Abstract:The composition depth profiles of the Mn thin films grown on GaAs(001) surface using MBE technique are studied with X-ray photoelectron spectroscopy (XPS). The experimental results show that the fcc-Mn/GaAs (001) system grown on a 400 K substrate has a sandwich structure with a Mn-Ga-As buffer layer located between the fee-Mn layer and the GaAs substrate; the ��-Mn/GaAs (001) system grown on a 300 K substrate also has a similar buffer layer which is much thinner than that of the fcc-Mn/GaAs(001) system;and the system grown on a 450 K substrate is a Mn-Ga-As alloy beyond the GaAs substrate and it has no Mn-dominated area. It is concluded that to keep the substrate at a proper temperature(400 K) during growth to obtain a suitable thickness of buffer layer is an essential requirement to grow fee-Mn on GaAs(001) surface.
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