Abstract:The temperature dependence of magnetic anisotropy in (113)A (Ga,Mn)As layers grown by molecular beam epitaxy is studied by means of superconducting quantum interference device (SQUID) magnetometry as well as by ferromagnetic resonance (FMR) and magnetooptical effects. Experimental results are described considering cubic and two kinds of uniaxial magnetic anisotropy. The magnitude of cubic and uniaxial anisotropy constants is found to be proportional to the fourth and second power of saturation magnetization, respectively. Similarly to the case of (001) samples, the spin reorientation transition from uniaxial anisotropy with the easy along the [-1, 1, 0] direction at high temperatures to the biaxial <100> anisotropy at low temperatures is observed around 25 K. The determined values of the anisotropy constants have been confirmed by FMR studies. As evidenced by investigations of the polar magnetooptical Kerr effect, the particular combination of magnetic anisotropies allows the out-of-plane component of magnetization to be reversed by an in-plane magnetic field. Theoretical calculations within the p-d Zener model explain the magnitude of the out-of-plane uniaxial anisotropy constant caused by epitaxial strain, but do not explain satisfactorily the cubic anisotropy constant. At the same time the findings point to the presence of an additional uniaxial anisotropy of unknown origin. Similarly to the case of (001) films, this additional anisotropy can be explained by assuming the existence of a shear strain. However, in contrast to the (001) samples, this additional strain has an out-of-the-(001)-plane character.

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Atmospheric oxygen in Mn doped GaAs/GaAs(0 0 1) thin films grown by molecular beam epitaxy

Growth of and optical emission from GaMnAs thin films grown by molecular beam epitaxy

XPS Study of Mn Thin Films Grown on GaAs001 Surfaces

An XPS study of Mn thin films grown on GaAs(001) surface

The Langevin Equation for a Quantum Heat Bath

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Mn incorporation in as-grown and annealed (Ga,Mn)As layers studied by x-ray diffraction and standing-wave uorescence

Effect of annealing on the depth profile of hole concentration in (Ga,Mn)As

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The Effect of Mn Interstitials on the Lattice Parameter of Ga(1-x)Mn(x)As

Systematic study of Mn-doping trends in optical properties of (Ga,Mn)As

Magnetic anisotropy of epitaxial (Ga,Mn)As on (113)A GaAs

Electronic- and band-structure evolution in low-doped (Ga,Mn)As

Magnetic and chemical nonuniformity in Ga[1-x]Mn[x]As films as probed by polarized neutron and x-ray reflectometry

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K-edge XANES of substitutional and interstitial Mn atoms in (Ga,Mn)As

Adsorption, Segregation and Magnetization of a Single Mn Adatom on the GaAs (110) Surface

Structural and optical properties of self-catalytic GaAs:Mn nanowires grown by molecular beam epitaxy on silicon substrates

Mn Behavior In Ge0.96mn0.04 Magnetic Thin Films Grown On Si