Abstract:High-performance type-II superlattices of III–V semiconductor materials play an important role in the development and application of infrared optoelectronic devices. Improving the quality of epitaxial materials and clarifying the luminescent mechanism are of great significance for practical applications. In this work, strain-balanced and high-quality InAs/InxGa1−xAsySb1−y superlattices without lattice mismatch were achieved on InAs and GaSb substrates successfully. Superlattices grown on InAs substrate could exhibit higher crystal quality and surface flatness based on high-resolution X-ray diffraction (HRXRD) and atomic force microscopy (AFM) measurements’ results. Moreover, the strain distribution phenomenon from geometric phase analysis indicates that fluctuations of alloy compositions in superlattices on GaSb substrate are more obvious. In addition, the optical properties of superlattices grown on different substrates are discussed systematically. Because of the difference in fluctuations of element composition and interface roughness of superlattices on different substrates, the superlattices grown on InAs substrate would have higher integral intensity and narrower full-width at half maximum of long-wave infrared emission. Finally, the thermal quenching of emission intensity indicates that the superlattices grown on the InAs substrate have better recombination ability, which is beneficial for increasing the operating temperature of infrared optoelectronic devices based on this type of superlattices.

Structure and Electrical Properties of InAs/GaInSb Superlattice Film

InxGa1-xSb/GaAs quantum well structures grown by molecular beam epitaxy

Studies on Inas/Gasb Superlattice Structural Properties by High Resolution X-Ray Diffraction

Mid-wavelength infrared InAs/GaSb superlattice grown by molecular beam epitaxy

X-Ray Diffraction Analysis of High Quality Inas/Gasb Type Ii Superlattices Grown by Mbe

High resolution X-ray diffraction study in InAs/GaSb superlattice

Metal Organic Chemical Vapor Deposition Growth and Characterization of Inas/Gasb Type-Ii Superlattices on Gaas (001) Substrates

High Quality Strain-Balanced InAs/InAsSb Type-Ii Superlattices Grown by Molecular Beam Epitaxy

Interface Effect on Superlattice Quality and Optical Properties of InAs/GaSb Type-Ii Superlattices Grown by Molecular Beam Epitaxy

Epitaxial InAs Films on GaSb Substrate and Study on Optical Properties

Characterization of InAs/GaSb Superlattices Grown by MOCVD with Atomic Resolution

Interface layer control and optimization of InAs/GaSb type-II superlattices grown by molecular beam epitaxy

Long-wave Infrared Emission Properties of Strain-Balanced InAs/InxGa1−xAsySb1−y Type-Ii Superlattice on Different Substrates

Atomic imaging and optical properties of InAs/In0.5Ga0.5As0.5Sb0.5 type II superlattice

The Interface Structure of InAs/GaInSb Strained-Layer Superlattice

Fabrication and Characterization of an InAs(Sb)/InxGa1−xAsySb1−y Type‐II Superlattice

Studies on Structural of Long Wavelength Infrared InAsSb Materials

GaSb Bulk Materials and InAs/GaSb Superlattices Grown by MBE on GaAs Substrates

Interfacial Structure of InAs/Ga1−xInxSb Superlattices

Effect of Strain on the Growth of InAs/GaSb Superlattices: An X-Ray Study

Interface Design And Properties In Inas/Gasb Type-Ii Superlattices Grown By Molecular Beam Epitaxy