MBE growth and luminescence property of GaSb thin film based on GaAs
Li Xiong,MeiCheng Li,YongXin Qiu,Baoshun Zhang,Lin Li,Guojun Liu,LianCheng Zhao
DOI: https://doi.org/10.3321/j.issn:1002-185x.2007.02.035
2007-01-01
Rare Metal Materials and Engineering
Abstract:The hetero epitaxial growth of GaSb on GaAs substrates by molecular beam epitaxy (MBE) was investigated. In order to decrease the dislocation density caused by the lattice mismatch, GaSb of low temperature (LT) was used as a buffer layer. It was found that the dislocation density of GaSb epilayer is decreased and the crystal quality is improved effectively. The growth parameters of LT GaSb buffer layer were studied by means of the double crystals X-ray diffraction (DCXRD) and atomic force microscope (AFM). It was found that the optimum thickness, growth rate, and V/III beam equivalent pressure ratio were 20 nm, 1.43 mu m/h and 2.0, respectively. Finally, the photoluminescence property of GaSb was studied on the basis of the optimized growth conditions of buffer layer. The spectra of GaSb film were composed of the exciton (BE4) and the dominate photo luminescence (PL) transited by donor-acceptor pair (D-A), with the strongest intensity of BE4 line at 50 K, and the narrowest full width at half maximum (FWHM).