Abstract:The direct epitaxial growth of GaAs on Si suffers from their nature of lattice mismatch, thermal mismatch and polarity difference induced anti-phase domains (APDs). Here, we report the high quality and thin GaAs film grown on {113}-faceted Ge/Si (001) hollow substrate by in-situ hybrid molecular beam epitaxy. By directly growth of Ge on U-shape patterned Si (001), a strain-relaxed high-quality Ge sawtooth hollow structure with {113} facets was obtained. With an additional 400 nm GaAs deposition, an APD-free surface with a root-mean-square roughness of merely 0.67 nm is obtained on such Ge {113} /Si (001) substrate. The lattice mismatch dislocation between Ge and Si is found to terminate mostly at the sidewalls of the hollow structures. The {113}-faceted Ge surface is acting as an equivalent to the miscut substrate, which annihilates the APDs at the GaAs/Ge interface. High-resolution X-ray diffraction characterization reveals that the hollow structures can effectively reduce the thermal strain, leading to a crack-free GaAs film up to 7 µm. Five-layer InAs/GaAs quantum dots (QDs) on such virtual GaAs/Ge {113} /Si (001) substrate without any dislocation filter layers exhibits almost the same photoluminescence (PL) intensity as that on the GaAs substrate, providing a promising method for integrating III-V QD lasers with silicon photonic platform.

GaSb Quantum Dots Growth by Liquid Phase Epitaxy

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

High-density Ge Dots Grown on Si Substrate by Modified S-K Method

Metal-organic chemical vapor deposition of GaSb/GaAs quantum dots: the dependence of the morphology on growth temperature and vapour V/III ratio

Optical properties of Ge/Si quantum dot superlattices

Epitaxial Growth of Optoelectronically Active Ga(As)Sb Quantum Dots on Al-Rich AlGaAs with GaAs Capsule Layers

Study on crystal growth of Ge/Si quantum dots at different Ge deposition by using magnetron sputtering technique

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Epitaxial growth of InAs/GaAs quantum dots on {113}-faceted Ge/Si (001) hollow substrate

Small-Size Ge/Si(001) Quantum Dots Grown By Molecular Boam Epitaxy

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Epitaxial growth of quantum dots on van der Waals surfaces

Densely packed Ge quantum dots grown on SiO2/Si substrate☆

Electronic structure of GaSb/AlGaSb quantum dots formed by filling droplet-etched nanoholes

Abnormal effect of growth interruption on GaSb quantum dots formation grown by molecular beam epitaxy

Growth of Ge Quantum Dots on Vicinal Si(001) Substrate by Solid Phase Epitaxy

Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition

A two-stage molecular beam epitaxial growth method to fabricate small and uniform Ge quantum dots on Si(100)

The Epitaxial Growth and Unique Morphology of InAs Quantum Dots Embedded in a Ge Matrix

Growth and Liquid-Phase Exfoliation of GaSe1-xSx Crystals