Abstract:Compared with their bulk counterparts, atomically thin two-dimensional (2D) crystals exhibit new physical properties and have the potential to enable next-generation electronic and optoelectronic devices. However, controlled synthesis of large uniform monolayer and multi-layer 2D crystals is still challenging. Here, we report the controlled synthesis of 2D GaSe crystals on SiO 2 /Si substrates using a vapor phase deposition method. For the first time, uniform, large (up to ~60 μm in lateral size), single-crystalline, triangular monolayer GaSe crystals were obtained and their structure and orientation were characterized from atomic scale to micrometer scale. The size, density, shape, thickness and uniformity of the 2D GaSe crystals were shown to be controllable by growth duration, growth region, growth temperature and argon carrier gas flow rate. The theoretical modeling of the electronic structure and Raman spectroscopy demonstrate a direct-to-indirect bandgap transition and progressive confinement-induced bandgap shifts for 2D GaSe crystals. The 2D GaSe crystals show p-type semiconductor characteristics and high photoresponsivity (~1.7 A/W under white light illumination) comparable to exfoliated GaSe nanosheets. These 2D GaSe crystals are potentially useful for next-generation electronic and optoelectronic devices such as photodetectors and field-effect transistors.

Growth and Liquid-Phase Exfoliation of GaSe1-xSx Crystals

Low-Temperature Growth of Two-Dimensional Layered Chalcogenide Crystals on Liquid.

Epitaxy and photoresponse of two-dimensional GaSe crystals on flexible transparent mica sheets.

Synthesis and Growth of GaSe Single Crystals

Controlled Vapor Phase Growth of Single Crystalline, Two-Dimensional GaSe Crystals with High Photoresponse

Pressure-Dependent Phonon Scattering of Layered GaSe Prepared by Mechanical Exfoliation*

Growth and Electro-Optical Characteristics of CdSe / GaAs Epilayers Prepared by Electron Beam Epitaxy

Ultrafast growth of high-quality large-sized GaSe crystals by liquid metal promoter

Growth and optical properties of single AgGaGe5Se12 (AGGSe) crystal

High-Quality GaSe Single Crystal Grown by the Bridgman Method

Growth and Optical Properties of Big-sized GaSe Single Crystals

Growth and Characterization of Sulfur-doped GaSe Single Crystals

SHG Phase Matching in GaSe and Mixed GaSe1(1-x)S(x), X < or =0.412, Crystals at Room Temperature.

Growth and Characterization of ZnMgSe Single Crystals from Zn-Mg-Se-I2 System

Study on the Growth Habits of AgGa1-xInxSe2 Crystals

Growth and Quality of Gallium Selenide (gase) Crystals

A Modified Vertical Bridgman Method for Growth of GaSe Single Crystal

Two-Dimensional Gese As an Isostructural and Isoelectronic Analogue of Phosphorene: Sonication-Assisted Synthesis, Chemical Stability, and Optical Properties

Growth, Structure, and Optical Properties of GaSb Quantum Dot by LPE Technique

Impurities related micro-defects in GaSb crystal grown by LEC method

Effective shape-controlled synthesis of gallium selenide nanosheets by vapor phase deposition