Abstract:Layered two-dimensional Group IV monochalcogenide semiconductors, a novel group of functional materials, are a focus of growing research interest. Numerous reports on germanium monosulfide (GeS) provide evidence of its advanced properties that gives it potential for application in electronics and optoelectronics. However, currently synthesized GeS tends to be patchy and discontinuous. In this study, a novel method that takes Mullins–Sekerka instability into account is proposed to grow continuous GeS thin films. By applying a pre-deposited amorphous GeS layer, submillimeter-scale laterally-grown GeS thin films with single domain areas of 800 μm in size and 100 nm in thickness are successfully achieved. Field-effect transistor (FET) arrays with GeS thin films directly grown on a SiO 2 /Si substrate at a growth temperature of 420 °C and isolated GeS channel patterns are fabricated for the first time and show clear gate voltage-dependent current–voltage ( I – V ) characteristics. We also obtained the hysteresis response of the I – V characteristics, which exhibit notably restrained behavior under light illumination. The successful synthesis of submillimeter-scale laterally-grown GeS thin films and the fabrication of GeS FET arrays should unlock the significant potential of GeS for use as a key functional material in the development of next-generation electronic and optoelectronic applications, such as full-light controlled computing-in-memory devices and sensors.

Upper airway collapsibility: measurement techniques and therapeutic implications.

InxGa1-xSb/GaAs quantum well structures grown by molecular beam epitaxy

Low-Temperature Growth of Two-Dimensional Layered Chalcogenide Crystals on Liquid.

quantum well structures grown by molecular beam epitaxy

Controlled Synthesis of High-Quality Monolayered Α-In2se3 Via Physical Vapor Deposition.

Growth of large-area 2D MoS₂(₁-x) Se₂x semiconductor alloys.

Unveiling Polymorphs and Polytypes of the 2D Layered Semiconducting Gallium Monosulfide

Synthesis of submillimeter-scale laterally-grown germanium monosulfide thin films and their electro-optic applications

Synthesis of C-5a-chain extended derivatives of 4-epi-isofagomine: Powerful β-galactosidase inhibitors and low concentration activators of GM1-gangliosidosis-related human lysosomal β-galactosidase.

Evolution of the surface morphology of GaSb epitaxial layers deposited by molecular beam epitaxy (MBE) on GaAs (100) substrates

The Structural, Chemical and Electronic Properties of A Stable Gas/Gaas Interface

Quasi-van der Waals Epitaxial Growth of γ'-GaSe Thin Films on GaAs(111)B Substrates

Formation of Thin GaAs Buffer Layers on Silicon for Light-Emitting Devices

Epitaxial growth of high-quality GaAs on Si(001) using ultrathin buffer layers

Substrate-induced strain in 2D layered GaSe materials grown by molecular beam epitaxy

Epitaxial growth of atomically thin Ga2Se2 films on c-plane sapphire substrates

Quasi-Van der Waals Epitaxial Growth of γ'-GaSe Nanometer-Thick Films on GaAs(111)B Substrates

Growth Mode Transition in Two-Dimensional GaSe on Three-Dimensional GaN/Sapphire Platform: Implication for Self-Powered Photodetection

Gallium sulfide thin film grown on GaAs(1 0 0) by microwave glow discharge

Coherent Heteroepitaxy of Bi2Se3 on GaAs (111)B

Surface and Interface Properties of InSb Epitaxial Thin Films Grown on Gaas by Low Pressure Metalorganic Chemical Vapor Deposition