Abstract:Heteroepitaxy growth of antimonide-based superlattices offers new opportunities for band structure engineering in infrared optoelectronics. Due to the wafer size limitations and cost of GaSb substrates, lattice - mismatched epitaxy of antimonide-based materials on GaAs substrates presents an attractive alternative with large wafer scales, low costs, and great ohmic contacts. Herein, we report a heterostructure growth method using molecular beam epitaxy based on the interfacial misfit (IMF) array technique. The 7.8% lattice mismatch at the GaAs/GaSb interface was accommodated through a thin low temperature (LT) nucleation layer followed by a thick hightemperature (HT) GaSb buffer layer. We explain the evolution of rectangular-like defects for direct growth GaSb on GaAs substrates. Under optimized GaAs/LT-GaSb/GaSb heterostructure growth conditions, we achieved highly smooth GaSb surfaces with well-defined atomic steps as observed in atomic force microscope (AFM) measurements. Furthermore, high-resolution X-ray diffraction (HRXRD) characterization reveals that misfit dislocations are dominated by 90 degrees dislocations at the GaAs/GaSb interface. We obtained a full width at half maximum (FWHM) of 140.6 arcsec for a 2 & mu;m thick GaSb layer on a GaAs substrate and achieved a high lattice relaxation of 99.7%. These results demonstrate that our proposed growth method holds great potential for achieving excellent surface morphology and high crystal quality in GaAs/GaSb heteroepitaxial system.

MBE growth and luminescence property of GaSb thin film based on GaAs

Homoepitaxial and Characterization of GaSb Thin Films by Molecular Beam Epitaxy

InxGa1-xSb/GaAs quantum well structures grown by molecular beam epitaxy

quantum well structures grown by molecular beam epitaxy

Effect of Buffer Layer Growth Rate on Two-Dimension Growth of GaSb Epitaxial Layer

Effect of Thickness on GaSb Thin Film Deposited by MBE

Research On Lt Gasb Buffer Layerduring Gasb Growth On Gaas Sustrate By Mbe

GaSb Bulk Materials and InAs/GaSb Superlattices Grown by MBE on GaAs Substrates

Molecular beam epitaxy growth and optical properties of high bismuth content GaSb 1-x Bi x thin films

Heteroepitaxial Growth of GaSb Interfacial Misfit Array on GaAs Substrate by Molecular Beam Epitaxy

Epitaxial GaSb films directly grown on on-axis Si(001) with low defect density by MBE

Optical Properties of Beryllium-Doped GaSb Epilayers Grown on GaAs Substrate

LPE Growth and Optical Characteristics of GaAs1−xSbx Epilayer

Optical investigation of GaSb thin films grown on GaAs by metalorganic magnetron sputtering

Mid-wavelength infrared InAs/GaSb superlattice grown by molecular beam epitaxy

Effect of Antimony Ambience on the Interfacial Misfit Dislocations Array in A Gasb Epilayer Grown on A Gaas Substrate by Mocvd

Epitaxial InAs Films on GaSb Substrate and Study on Optical Properties

Interface layer control and optimization of InAs/GaSb type-II superlattices grown by molecular beam epitaxy

Mbe Growth And Properties Of Wide Band-Gap Ii-Vi Strained-Layer Superlattice

Growth, Structure, and Optical Properties of GaSb Quantum Dot by LPE Technique

Evolution of the surface morphology of GaSb epitaxial layers deposited by molecular beam epitaxy (MBE) on GaAs (100) substrates