Abstract:We demonstrate the unique capability of molecular beam epitaxy (MBE) to synthesize III-V and group-IV semiconductors in well-defined geometrical and spatial arrangements. Based on the shrinkage of the physical size of materials from micron to nanometer dimensions, the concept of band-gap (or wavefunction) engineering in quantum wells and superlattices has been exploited. Quantum well heterostructures made of the materials systems GaAs/AlxGa1-xAs, Ga0.47In0.53As/Al0.48In0.52As, and GaSb/AlxGa1-xSb are important for photonic devices covering the wavelength range 0.65 < λ > 1.75 μm and for high-speed electron devices. New electronic phenomena based on quantum confinement and tunneling of carriers in these multiquantum well heterostructures and superlattices have led to the development of novel devices, including quantum well lasers, bistable optical devices, high-speed optical modulators, new avalanche photodiodes and staircase photomultipliers, high electron mobility transistors, hot electron transistors, etc. We will discuss some selected examples of the growth, the physics, and the performance of these devices. In addition, as an example for strained-layer superlattices, we will report on Si/SixGe1-x super-lattices where the ordering of the electronic bands is strongly affected by the built-in strain. Therefore, depending on the strain distribution, two-dimensional electron or hole gases can be obtained in selectively doped Si/SixGe1-x superlattices.

Mbe Growth And Properties Of Wide Band-Gap Ii-Vi Strained-Layer Superlattice

InxGa1-xSb/GaAs quantum well structures grown by molecular beam epitaxy

quantum well structures grown by molecular beam epitaxy

Molecular beam epitaxy and optical properties of Zn1-xMnxSe/ZnSe strained-layer superlattices

The optical and spectroscopic properties of II–VI wide-gap ZnSe/ZnS and ZnSe/ZnTe strained-layer superlattices

Molecular beam epitaxy and characterization of Zn1-xMnxSe/ZnSe superlattices on (100) GaAs substrates

Growth and Optical Characterization of Diluted Magnetic Semiconductor Zn1−xMnxSe/ZnSe Strained-Layer Superlattices

Molecular beam epitaxial growth and characterization of ZnMgSSe on GaAs

Mbe Growth of Gaas/Algaas(Alas) Quantum-Well and Superlattice Structures

II-VI / III-V Strained-Layer Superlattice Materials and Devices

GSMBE growth and characterizations of AlInP/InGaAsP strain-compensated multiple-layer heterostructures

Optical Properties of ZnSe/ZnSxSe1-x Strained-Layer Supperlattics by Molecular Beam Epitaxy

Theoretical Study of Structures and Growth of Strained Si/Ge Superlattices

Molecular Beam Epitaxial Growth and Properties of Layered Semiconductor Structures for Advanced Photonic and Electronic Devices

Raman-Spectra of Znse-Znte Strained-Layer Superlattice

BAND STRUCTURE OF Si/Ge STRAINED LAYER SUPERLATTICE

Superlattices of Bi2Se3/In2Se3: Growth Characteristics and Structural Properties

Structural And Optical Properties Of Zn(1-X)Mg(X)Se Alloys Grown On Gaas(001) Substrates By Molecular Beam Epitaxy

Electronic Structures of Strained Layer Superlattices (Si)m/(Si1-xGex)m(100) with m=1 and m=2n (n=1-10)

Optical properties of Ge/Si quantum dot superlattices

Structural Ability and Electronic Density of States in (001)- and (111)-Oriented (Gap)1/(inp)1strained-Layer Superlattices