Abstract:Two-dimensional (2D) atomic-layered heterostructures stacked by van der Waals interactions recently introduced new research fields, which revealed novel phenomena and provided promising applications for electronic, optical, and optoelectronic devices. In this study, we report the van der Waals epitaxial growth of high-quality atomically thin Bi2Se3 on single crystalline hexagonal boron nitride (h-BN) by chemical vapor deposition. Although the in-plane lattice mismatch between Bi2Se3 and h-BN is approximately 65%, our transmission electron microscopy analysis revealed that Bi2Se3 single crystals epitaxially grew on h-BN with two commensurate states; that is, the (1̅21̅0) plane of Bi2Se3 was preferably parallel to the (1̅100) or (1̅21̅0) plane of h-BN. In the case of the Bi2Se3 (2̅110) ∥ h-BN (11̅00) state, the Moiré pattern wavelength in the Bi2Se3/h-BN superlattice can reach 5.47 nm. These naturally formed thin crystals facilitated the direct assembly of h-BN/Bi2Se3/h-BN sandwiched heterostructures without introducing any impurity at the interfaces for electronic property characterization. Our quantum capacitance (QC) measurements showed a compelling phenomenon of thickness-dependent topological phase transition, which was attributed to the coupling effects of two surface states from Dirac Fermions at/or above six quintuple layers (QLs) to gapped Dirac Fermions below six QLs. Moreover, in ultrathin Bi2Se3 (e.g., 3 QLs), we observed the midgap states induced by intrinsic defects at cryogenic temperatures. Our results demonstrated that QC measurements based on h-BN/Bi2Se3/h-BN sandwiched structures provided rich information regarding the density of states of Bi2Se3, such as quantum well states and Landau quantization. Our approach in fabricating h-BN/Bi2Se3/h-BN sandwiched device structures through the combination of bottom-up growth and top-down dry transferring techniques can be extended to other two-dimensional layered heterostructures.

Superlattices of Bi2Se3/In2Se3: Growth Characteristics and Structural Properties

The Growth and Characteristics of In2Se3/(Bi1−xInx)2Se3 Superlattices with Asymmetric Graded Interfaces by Molecular Beam Epitaxy

Interface Structure of A Topological Insulator/Superconductor Heterostructure

Epitaxial Growth of Bi 2 Se 3 Topological Insulator Thin Films on Si ( 111 )

Van Der Waals Epitaxial Growth of Atomically Thin Bi2se3 and Thickness-Dependent Topological Phase Transition

Topological Insulator Bi2Se3 Thin Films Grown on Double-Layer Graphene by Molecular Beam Epitaxy

Topological insulator in a Bi-Bi$_2$Se$_3$ infinitely adaptive superlattice phase

Molecular-beam Epitaxy of Topological Insulator Bi2Se3(111) and (221) Thin Films

Crossover from 3d to 2d Quantum Transport in Bi2se3/In2se3 Superlattices

Kinetics-controlled Epitaxial Growth and Bipolar Transport Properties of Semimetal Bi4Se3

Growth and band alignment of Bi2Se3 topological insulator on H-terminated Si(111) van der Waals surface

Quintuple-Layer Epitaxy Of Thin Films Of Topological Insulator Bi2se3

Epitaxial Growth and Thermal-Conductivity Limit of Single-Crystalline Bi2se3/In2se3 Superlattices on Mica

Growth and structural characterisation of Sr-doped Bi2Se3 thin films

The van der Waals epitaxy of Bi2Se3 on the vicinal Si(111) surface: An approach for preparing high-quality thin films of a topological insulator

Ordered Growth of Topological Insulator Bi2Se3 Thin Films on Dielectric Amorphous SiO2 by MBE

Molecular beam epitaxial growth of topological insulators.

Growth and Structural Characterisation of Sr-doped Bi 2 Se 3 Thin Films

Molecular Beam Epitaxy of Twin-Free Bi2Se3 and Sb2Te3 on In2Se3/InP(111)B Virtual Substrates

Van der Waals epitaxy of Bi2Se3 on Si(111) vicinal surface: An approach to prepare high-quality thin films of topological insulator

Selectable Growth and Electronic Structures of Two-Dimensional Layered InSe and In2Se3 Films