Abstract:Superlattices (SLs) consisted of alternating Bi2Se3 and In2Se3 layers are grown on Si(111) by molecular-beam epitaxy. Bi2Se3, a three-dimensional topological insulator (TI), showed good chemical and structural compatibility with In2Se3, a normal band insulator with large energy bandgap. The individual layers in the SLs are very uniform and the hetero-interfaces are sharp. Therefore, such SL structures are potential candidates for explorations of the quantum size effects of TIs.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: **How to successfully grow high - quality Bi₂Se₃/In₂Se₃ superlattice structures and explore their potential in quantum - size effects and device applications**. Specifically, the researchers are concerned with: 1. **Material Selection and Compatibility**: - Bi₂Se₃ is a three - dimensional topological insulator (TI), while In₂Se₃ is a common band insulator with a large bandgap. The two are chemically and structurally well - compatible, which provides a basis for constructing superlattice (SL) structures. 2. **Heteroepitaxial Growth**: - The researchers alternately grow Bi₂Se₃ and In₂Se₃ layers on a Si(111) substrate by molecular beam epitaxy (MBE) technology to form a superlattice structure. They hope to obtain a uniform and clearly - interfaced layered structure for further study of the quantum - size effect. 3. **Structural Quality Optimization**: - Previous studies have shown that when Bi₂Se₃ is combined with ZnSe, it is difficult to form an ideal heterostructure. Therefore, this study aims to find a better combination, that is, Bi₂Se₃ and In₂Se₃, to achieve a high - quality superlattice structure. Through characterization means such as TEM and XRD, the success and superiority of this combination have been verified. 4. **Strain Relaxation Mechanism**: - The researchers also explored the strain relaxation mechanism in the Bi₂Se₃/In₂Se₃ superlattice structure and found that the strain is mainly relaxed at the van der Waals interface without causing the breakage of chemical bonds. This property makes the coupling between Bi₂Se₃ and In₂Se₃ very weak, thus ensuring a 2D layered growth mode and a sharp interface. In summary, the main objective of this paper is to successfully grow high - quality Bi₂Se₃/In₂Se₃ superlattice structures by MBE technology and study their structural characteristics, providing an experimental basis for future exploration of quantum - size effects and device applications.

Superlattices of Bi2Se3/In2Se3: Growth Characteristics and Structural Properties

Interface Structure of A Topological Insulator/Superconductor Heterostructure

InxGa1-xSb/GaAs quantum well structures grown by molecular beam epitaxy

Epitaxial Growth of Bi2se3 Topological Insulator Thin Films on Si (111)

Topological Insulator Bi2Se3 Thin Films Grown on Double-Layer Graphene by Molecular Beam Epitaxy

Topological insulator in a Bi-Bi$_2$Se$_3$ infinitely adaptive superlattice phase

Crossover from 3d to 2d Quantum Transport in Bi2se3/In2se3 Superlattices

Growth and band alignment of Bi2Se3 topological insulator on H-terminated Si(111) van der Waals surface

Quintuple-Layer Epitaxy Of Thin Films Of Topological Insulator Bi2se3

Growth and structural characterisation of Sr-doped Bi2Se3 thin films

Ordered Growth of Topological Insulator Bi2Se3 Thin Films on Dielectric Amorphous SiO2 by MBE

Molecular beam epitaxial growth of topological insulators.

Molecular Beam Epitaxy of Twin-Free Bi2Se3 and Sb2Te3 on In2Se3/InP(111)B Virtual Substrates

Van der Waals epitaxy of Bi2Se3 on Si(111) vicinal surface: An approach to prepare high-quality thin films of topological insulator

Selectable Growth and Electronic Structures of Two-Dimensional Layered InSe and In2Se3 Films

Intrinsic Topological Insulator Bi2Te3 Thin Films on Si and Their Thickness Limit.

Quintuple-layer epitaxy of high-quality Bi2Se3 thin films for topological insulator

The Coexistence of Superconductivity and Topological Order in the Bi 2 Se 3 Thin Films

Lateral and Vertical Two-Dimensional Layered Topological Insulator Heterostructures

Bi$_{2}$Se$_{3}$ thin films heteroepitaxially grown on $α$-RuCl$_{3}$