Abstract:Topological insulators (TIs) have become one of the intensely pursed topics during the past few years due to their robust gapless edge states, among which bismuth (Bi) enjoys a good reputation because of its rich quantum states. However, bulk Bi itself is topologically trivial. While thin Bi film has long been theoretically perceived to be a two-dimensional topological insulator, it still remains a challenge to construct free-standing Bi(111) film experimentally. Herein, we investigate the epitaxial growth of bismuth films on graphene with the film facet ranging from (110) to (111) with increasing coverage and demonstrate the topologically nontrivial property embedded in Bi(111) layers by angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT) calculations. In contrast to the bulk Bi with semimetallicity, a metallic surface state is revealed in the 7-bilayer Bi(111) with a circle-shape photoemission intensity plot, while the stacking of free-standing bismuth bilayers on graphene is rationalized to be responsible for the nontrivial characteristics of Bi(111) with an odd crossing of the Fermi level. Our report herein proposes an intriguing approach toward fabricating topologically nontrivial bismuth film, as well as advancing the fundamental understanding of Bi(111) bilayers. Importantly, the combination of the nontrivial Bi(111) film and graphene might also shed useful insights into the development of nanotronics and spintronics.

Quintuple-Layer Epitaxy Of Thin Films Of Topological Insulator Bi2se3

Quintuple-layer epitaxy of high-quality Bi2Se3 thin films for topological insulator

Topological Insulator Bi2Se3 Thin Films Grown on Double-Layer Graphene by Molecular Beam Epitaxy

Epitaxial Growth of Bi 2 Se 3 Topological Insulator Thin Films on Si ( 111 )

Epitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface

Van der Waals epitaxy of Bi2Se3 on Si(111) vicinal surface: An approach to prepare high-quality thin films of topological insulator

Molecular beam epitaxial growth of topological insulators.

Interface Structure of A Topological Insulator/Superconductor Heterostructure

Topological Limit of Ultrathin Quasi-Free-standing Bi2Te3films Grown on Si(111)

Intrinsic Topological Insulator Bi2Te3 Thin Films on Si and Their Thickness Limit.

Atomically smooth ultrathin films of topological insulator Sb 2 Te 3

Growth of Topological Insulator Bi2te3 Ultrathin Films on Si(111) Investigated by Low-Energy Electron Microscopy

Growth of Ultrathin Bi$_2$Se$_3$ Films by Molecular Beam Epitaxy

Interfacial Bonding and Structure of Bi2te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering

Epitaxial Growth of Free-Standing Bismuth Film on Graphene Embedded with Nontrivial Properties

Epitaxial Growth of High Mobility Bi2Se3 Thin Films on CdS

Growth of quantum well films of topological insulator Bi2Se3 on insulating substrate

Ordered Growth of Topological Insulator Bi2Se3 Thin Films on Dielectric Amorphous SiO2 by MBE

Atomically smooth ultrathin films of topological insulator Sb<sub>2</sub>Te<sub>3</sub>

Growth dynamics and thickness-dependent electronic structure of topological insulator Bi2Te3 thin films on Si

2D Bi2Se3 van der Waals Epitaxy on Mica for Optoelectronics Applications