Abstract:Submitted for the MAR10 Meeting of The American Physical Society Topological insulator Sb2Te3 thin films grown by MBE 1 JIN-FENG JIA, GUANG WANG, XIE-GANG ZHU, YAO-YI LI, JING WEN, Key Lab for Atomic, Molecular and Nanoscience, Department of Physics, Tsinghua University, Beijing 100084, P. R. China, KE HE, LILI WANG, XUCUN MA2, HAI-JUN ZHANG, ZHONG FANG, Institute of Physics, The Chinese Academy of Sciences, Beijing 100190, P. R. China, QI-KUN XUE, Key Lab for Atomic, Molecular and Nanoscience, Department of Physics, Tsinghua University, Beijing 100084, P. R. China — Atomically flat Sb2Te3 thin films were grown by molecular beam epitaxy (MBE) on Si(111) substrate. Layer-by-layer growth was characterized by real time reflection high-energy electron diffraction (RHEED) intensity oscillations. In situ angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy (STM) measurements reveal that the as-grown films are stoichiometric Sb2Te3. When the thickness is larger than two quintuple layers, the films show the predicted topological property with a single Dirac-cone on the surface. The measured band structure for the films with a thickness from one to five quintuple layers agrees well with our first principle calculations. 1The work is supported by NSFC and the National Basic Research Program from MOST of China. 2hjzhang@aphy.iphy.ac.cn Jinfeng Jia Key Lab for Atomic, Molecular and Nanoscience, Department of Physics, Tsinghua University, Beijing 100084, P. R. China Date submitted: 16 Nov 2009 Electronic form version 1.4

Topological Limit of Ultrathin Quasi-Free-standing Bi2Te3films Grown on Si(111)

Interfacial Bonding and Structure of Bi2te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering

Growth dynamics and thickness-dependent electronic structure of topological insulator Bi2Te3 thin films on Si

Intrinsic Topological Insulator Bi2Te3 Thin Films on Si and Their Thickness Limit.

Interfacial protection of topological surface states in ultrathin Sb films.

Epitaxial Growth of Free-Standing Bismuth Film on Graphene Embedded with Nontrivial Properties

Growth of Topological Insulator Bi2te3 Ultrathin Films on Si(111) Investigated by Low-Energy Electron Microscopy

Coexistence of Topological Edge State and Superconductivity in Bismuth Ultrathin Film

Topologically Nontrivial Bismuth(111) Thin Films Grown on Bi2Te3

Atomically smooth ultrathin films of topological insulator Sb 2 Te 3

Photoemission Circular Dichroism and Spin Polarization of the Topological Surface States in UltrathinBi2Te3Films

Quasiparticle scattering in three-dimensional topological insulators near the thickness limit

Atomically smooth ultrathin films of topological insulator Sb<sub>2</sub>Te<sub>3</sub>

Electronic and topological properties of Bi(110) ultrathin films grown on a Cu(111) substrate

The emergence of topologically protected surface states in epitaxial Bi(111) thin films

Topological Properties Determined by Atomic Buckling in Self-Assembled Ultrathin Bi(110)

Topological Insulator Sb2Te3 Thin Films Grown by MBE

Molecular Beam Epitaxy of Bilayer Bi(111) Films on Topological Insulator Bi2te3: A Scanning Tunneling Microscopy Study

Evolution of the Electronic Structure in Ultrathin Bi(111) Films

Stable nontrivial Z2 topology in ultrathin Bi (111) films: a first-principles study

Landau Quantization and the Thickness Limit of Topological Insulator Thin Films Ofsb2te3