Abstract:Submitted for the MAR10 Meeting of The American Physical Society Topological insulator Sb2Te3 thin films grown by MBE 1 JIN-FENG JIA, GUANG WANG, XIE-GANG ZHU, YAO-YI LI, JING WEN, Key Lab for Atomic, Molecular and Nanoscience, Department of Physics, Tsinghua University, Beijing 100084, P. R. China, KE HE, LILI WANG, XUCUN MA2, HAI-JUN ZHANG, ZHONG FANG, Institute of Physics, The Chinese Academy of Sciences, Beijing 100190, P. R. China, QI-KUN XUE, Key Lab for Atomic, Molecular and Nanoscience, Department of Physics, Tsinghua University, Beijing 100084, P. R. China — Atomically flat Sb2Te3 thin films were grown by molecular beam epitaxy (MBE) on Si(111) substrate. Layer-by-layer growth was characterized by real time reflection high-energy electron diffraction (RHEED) intensity oscillations. In situ angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy (STM) measurements reveal that the as-grown films are stoichiometric Sb2Te3. When the thickness is larger than two quintuple layers, the films show the predicted topological property with a single Dirac-cone on the surface. The measured band structure for the films with a thickness from one to five quintuple layers agrees well with our first principle calculations. 1The work is supported by NSFC and the National Basic Research Program from MOST of China. 2hjzhang@aphy.iphy.ac.cn Jinfeng Jia Key Lab for Atomic, Molecular and Nanoscience, Department of Physics, Tsinghua University, Beijing 100084, P. R. China Date submitted: 16 Nov 2009 Electronic form version 1.4

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Landau Quantization of Topological Surface States Inbi2se3

Topological Limit of Ultrathin Quasi-Free-Standing Bi2te3 Films Grown on Si(111)

Electric-Field Tuning Of The Surface Band Structure Of Topological Insulator Sb2te3 Thin Films

Topological Insulator Sb2Te3 Thin Films Grown by MBE

Interfacial Bonding and Structure of Bi2te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

Growth dynamics and thickness-dependent electronic structure of topological insulator Bi2Te3 thin films on Si

Electronic band structure of Sb2Te3

Weak Anti-localization and Quantum Oscillations of Surface States in Topological Insulator Bi2Se2Te

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Quasiparticle scattering in three-dimensional topological insulators near the thickness limit

Intrinsic Topological Insulator Bi2Te3 Thin Films on Si and Their Thickness Limit.

In Situ Raman Spectroscopy of Topological Insulator Bi2Te3 Films with Varying Thickness

Electron Interaction-Driven Insulating Ground State In Bi2se3 Topological Insulators In The Two-Dimensional Limit

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Characterizing the chemical potential disorder in the topological insulator (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ thin films

Scanning Tunneling Microscopy Studies of Topological Insulators Grown by Molecular Beam Epitaxy

Topological phases of topological insulator thin films

Probing Dirac Fermion Dynamics in Topological Insulator Bi2Se3 Films with a Scanning Tunneling Microscope.